Containing Paperes Presented At The European Materials Research Society 1993 Spring Meeting Symposium B Low Temperature Molecular Beam Epitaxial Iii V Materials Physics And Applications
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Kokuritsu Kokkai Toshokan shozō kagaku gijutsu kankei Ōbun kaigiroku mokuroku
Author | : Kokuritsu Kokkai Toshokan (Japan) |
Publisher | : |
Total Pages | : 1596 |
Release | : 1997 |
Genre | : Science |
ISBN | : |
Index of Conference Proceedings
Author | : British Library. Document Supply Centre |
Publisher | : |
Total Pages | : 872 |
Release | : 1995 |
Genre | : Congresses and conventions |
ISBN | : |
Semiconductor Materials for Optoelectronics and LTMBE Materials
Author | : J.P. Hirtz |
Publisher | : Elsevier |
Total Pages | : 365 |
Release | : 2016-07-29 |
Genre | : Science |
ISBN | : 1483290425 |
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Scientific and Technical Aerospace Reports
Author | : |
Publisher | : |
Total Pages | : 700 |
Release | : 1995 |
Genre | : Aeronautics |
ISBN | : |
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
C,H,N and O in Si and Characterization and Simulation of Materials and Processes
Author | : A. Borghesi |
Publisher | : North Holland |
Total Pages | : 624 |
Release | : 1996 |
Genre | : Science |
ISBN | : |
Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
Atomic Layer Deposition for Semiconductors
Author | : Cheol Seong Hwang |
Publisher | : Springer Science & Business Media |
Total Pages | : 266 |
Release | : 2013-10-18 |
Genre | : Science |
ISBN | : 146148054X |
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Metalorganic Vapor Phase Epitaxy (MOVPE)
Author | : Stuart Irvine |
Publisher | : John Wiley & Sons |
Total Pages | : 582 |
Release | : 2019-10-07 |
Genre | : Technology & Engineering |
ISBN | : 1119313015 |
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).