Commercialization Of Germanium Based Nanocrystal Memory
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| Author | : Kian Chiew Seow |
| Publisher | : |
| Total Pages | : 100 |
| Release | : 2007 |
| Genre | : |
| ISBN | : |
This thesis explores the commercialization of germanium-based nanocrystal memories. Demand for smaller and faster electronics and embedded systems supports the development of high-density, low-power non-volatile electronic memory devices. Flash memory cells designed for ten years of data retention require the use of a thick tunneling oxide. This compromises writing and reading speed as well as endurance. A smaller device size can be achieved and speed and can be improved by decreasing the oxide thickness. However, significant charge leakage will occur if the oxide is too thin, which will reduce the data retention time dramatically. This imposes a limit to the amount by which the oxide thickness can be decreased in conventional devices. Research has shown that by incorporating nanocrystals in the tunnel oxide, charge traps are created which reduce charge leakage and improve endurance through charge-storage redundancy. By replacing the conventional floating gate memory with one using Si or Ge nanocrystals, the nonvolatile memory exhibits high programming speed with low programming voltage and superior retention time, and yet is compatible with conventional silicon technology. This thesis provides an analysis of competing technologies, an intellectual property analysis, costs modeling as well as ways to improve nanocrystal memories in order to compete with other forms of emerging technologies to replace conventional Flash memories.
| Author | : Hyun Gyung Kim |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2020 |
| Genre | : |
| ISBN | : |
Approaches to colloidal synthesis have rapidly developed to control the size, shape, and composition of various semiconductors, offering cost reductions, controllability, and scalability. Of semiconductor materials, germanium nanomaterials are known to be the most difficult to synthesize in solution-based methods because of their high crystallization temperature. Zero-dimensional germanium nanocrystals were synthesized by the heat-up method, without any strong reducing agent. Subsequently, finely controlled size-selective precipitation narrowed size distributions, and size-selected nanocrystals successfully created a monolayer germanium nanocrystals superlattice. One-dimensional germanium nanorods were synthesized by the solution–liquid–solid method using tin nanoparticles as seeds. By forming a liquid alloy with the tin seed at the eutectic temperature, which is much lower than the crystallization temperature, germanium nanorods were grown from the tin seed. A monophenylsilane enhanced the yield of germanium nanorods by promoting the phenyl redistribution of diphenylgermane, a germanium precursor. Using a mixture of HCl and HF, tin seeds were completely removed from the tips of the germanium nanorods, leaving germanium crystalline nanorods. Nonvolatile memories, a key component in various electronics and portable systems, include phase-change memory, a leading technology that has seen exponential growth in demand over the last decade. One important class of phase change materials are compounds on the GeTe–Sb2Te3 tie line. Despite interesting properties of the nanomaterials, colloidal synthesis of phase change material nanocrystals has only been rarely reported. In the present study, three representative phase change material nanocrystals, GeTe, Sb2Te3, and Ge2Sb2Te5, were successfully synthesized using the hot-injection method. A poly(vinylpyrrolidinone)–hexadecane (PVP–HDE) polymer was essential for the nanocrystal dispersion and making ternary Ge2Sb2Te5 nanocrystals. Two solvents, oleylamine and trioctylphosphine, were studied for synthesizing all three nanocrystals and reveal the conversion chemistry of phase change material precursors
| Author | : Writam Banerjee |
| Publisher | : CRC Press |
| Total Pages | : 683 |
| Release | : 2024-08-09 |
| Genre | : Technology & Engineering |
| ISBN | : 1040119107 |
In recent years, the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals in various applications have attracted considerable scientific attention in the field of nonvolatile memory (NVM). Nanocrystals are the driving elements that have helped nonvolatile flash memory technology reach its distinguished height, but new approaches are still needed to strengthen nanocrystal-based nonvolatile technology for future applications. This book presents comprehensive knowledge on nanocrystal fabrication methods and applications of nanocrystals in baseline NVM and emerging NVM technologies and the chapters are written by experts in the field from all over the globe. The book presents a detailed analysis on nanocrystal-based emerging devices by a high-level researcher in the field. It has a unique chapter especially dedicated to graphene-based flash memory devices, considering the importance of carbon allotropes in future applications. This updated edition covers emerging ferroelectric memory device, which is a technology for the future, and the chapter is contributed by the well-known Ferroelectric Memory Company, Germany. It includes information related to the applications of emerging memories in sensors and the chapter is contributed by Ajou University, South Korea. The book introduces a new chapter for emerging NVM technology in artificial intelligence and the chapter is contributed by University College London, UK. It guides the readers throughout with appropriate illustrations, excellent figures, and references in each chapter. It is a valuable tool for researchers and developers from the fields of electronics, semiconductors, nanotechnology, materials science, and solid-state memories.
| Author | : |
| Publisher | : |
| Total Pages | : 160 |
| Release | : 2004 |
| Genre | : Microtechnology |
| ISBN | : |
| Author | : Writam Banerjee |
| Publisher | : CRC Press |
| Total Pages | : 534 |
| Release | : 2018-10-09 |
| Genre | : Science |
| ISBN | : 1351203258 |
In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile flash memory technology to a distinguished height. However, new approaches are still required to strengthen this technology for future applications. This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices.
| Author | : Betty Prince |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 290 |
| Release | : 2007-05-08 |
| Genre | : Technology & Engineering |
| ISBN | : 0306475537 |
Emerging Memories: Technologies and Trends attempts to provide background and a description of the basic technology, function and properties of emerging as well as discussing potentially suitable applications. This book explores a range of new memory products and technologies. The concept for some of these memories has been around for years. A few completely new. Some involve materials that have been in volume production in other type of devices for some time. Ferro-electrics, for example, have been used in capacitors for more than 30 years. In addition to looking at using known devices and materials in novel ways, there are new technologies being investigated such as DNA memories, light memories, molecular memories, and carbon nanotube memories, as well as the new polymer memories which hold the potential for the significant manufacturing reduction. Emerging Memories: Technologies and Trends is a useful reference for the professional engineer in the semiconductor industry.
| Author | : Alexandra Lauren Holmes |
| Publisher | : |
| Total Pages | : |
| Release | : 2015 |
| Genre | : |
| ISBN | : 9781339543307 |
Group IV nanomaterials are of interest for a variety of applications that rely on their size dependent characteristics. A fundamental understanding of the optical and electronic properties of these nanomaterials is crucial for application. Recent interest in germanium (Ge) and Ge-based nanomaterials has grown due to advances of size, shape, and compositional control obtained from the reduction of Ge iodides in amine solvents. In Chapter 1 a brief overview of solution-based Ge nanocrystal (NC) synthesis and ligand exchange is provided. The use of microwave irradiation for NC synthesis is discussed. Cyclic voltammetry is introduced as a method to characterize the electronic bandgap of NCs. Chapter 2 discusses the microwave-assisted, solution-based synthesis of Ge NCs. Cyclic voltammetry and optical absorption were used to investigate the absolute band energies of Ge NCs of different sizes and capping ligands. As shown for other NC compositions, the ligand identity plays a role in the electronic properties of the quantum confined Ge NCs. Notably, redox active ligands were utilized to understand how the NC affects the properties of the ligand and vice versa. Chapter 3 investigates the mechanistic role of iodine in the synthesis of Ge NCs and the effect of iodine on the production of Ge NC from either Ge(II) or Ge(IV) iodides is amine solvents. It was demonstrated that iodine mediates size control though the in situ oxidation of Ge(II) iodide. Iodine was also shown to react with Ge(IV) iodide to form Ge NC aggregates. In Chapter 4, disulfides are considered as molecular precursors and as surface ligands. It was shown that there is a change in Ge NC size upon the addition of different disulfides to the reaction of Ge(II) iodide in oleylamine. Additionally, several methods of ligand exchange were tested for passivation of the Ge NC surface with disulfide reagents.
| Author | : Viktor Evgen?evich Borisenko |
| Publisher | : World Scientific |
| Total Pages | : 508 |
| Release | : 2001 |
| Genre | : Science |
| ISBN | : 9810246188 |
The book contains impressive results obtained in the XX-th century and discussion of next challenges of the XXI-st century in understanding of the nanoworld. The main sections of the book are: (1) Physics of Nanostructures, (2) Chemistry of Nanostructures, (3) Nanotechnology, (4) nanostructure Based Devices.
| Author | : Victor E Borisenko |
| Publisher | : World Scientific |
| Total Pages | : 508 |
| Release | : 2001-04-02 |
| Genre | : Technology & Engineering |
| ISBN | : 9814491063 |
The book contains impressive results obtained in the XX-th century and discussion of next challenges of the XXI-st century in understanding of the nanoworld. The main sections of the book are: (1) Physics of Nanostructures, (2) Chemistry of Nanostructures, (3) Nanotechnology, (4) nanostructure Based Devices.
| Author | : Arup Bhattacharyya |
| Publisher | : CRC Press |
| Total Pages | : 512 |
| Release | : 2017-07-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1351798324 |
The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
