Charge Trapping Non Volatile Memories
Download Charge Trapping Non Volatile Memories full books in PDF, epub, and Kindle. Read online free Charge Trapping Non Volatile Memories ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author | : Panagiotis Dimitrakis |
Publisher | : Springer |
Total Pages | : 215 |
Release | : 2017-02-14 |
Genre | : Technology & Engineering |
ISBN | : 3319487051 |
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
Author | : Panagiotis Dimitrakis |
Publisher | : Springer |
Total Pages | : 219 |
Release | : 2015-08-05 |
Genre | : Technology & Engineering |
ISBN | : 3319152904 |
This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Author | : Panagiotis Dimitrakis |
Publisher | : |
Total Pages | : |
Release | : 2015 |
Genre | : |
ISBN | : 9783319152912 |
This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Author | : Helena Gomes Silva |
Publisher | : |
Total Pages | : 226 |
Release | : 2005 |
Genre | : |
ISBN | : |
Author | : Vincenzo Della marca |
Publisher | : |
Total Pages | : 162 |
Release | : 2013 |
Genre | : |
ISBN | : |
The silicon nanocrystal memories are one of the most attractive solutions to replace the Flash floating gate for nonvolatile memory embedded applications, especially for their high compatibility with CMOS process and the lower manufacturing cost. Moreover, the nanocrystal size guarantees a weak device-to-device coupling in an array configuration and, in addition, for this technology it has been shown the robustness against SILC. One of the main challenges for embedded memories in portable and contactless applications is to improve the energy consumption in order to reduce the design constraints. Today the application request is to use the Flash memories with both low voltage biases and fast programming operation. In this study, we present the state of the art of Flash floating gate memory cell and silicon nanocrystal memories. Concerning this latter device, we studied the effect of main technological parameters in order to optimize the cell performance. The aim was to achieve a satisfactory programming window for low energy applications. Furthermore, the silicon nanocrystal cell reliability has been investigated. We present for the first time a silicon nanocrystal memory cell with a good functioning after one million write/erase cycles, working on a wide range of temperature [-40°C; 150°C]. Moreover, ten years data retention at 150°C is extrapolated. Finally, the analysis concerning the current and energy consumption during the programming operation shows the opportunity to use the silicon nanocrystal cell for low power applications. All the experimental data have been compared with the results achieved on Flash floating gate memory, to show the performance improvement.
Author | : Etienne Nowak |
Publisher | : |
Total Pages | : 272 |
Release | : 2016-12-20 |
Genre | : |
ISBN | : 9783659970368 |
Author | : Yoshio Nishi |
Publisher | : Woodhead Publishing |
Total Pages | : 662 |
Release | : 2019-06-15 |
Genre | : Science |
ISBN | : 0081025858 |
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory
Author | : Yoshio Nishi |
Publisher | : Elsevier |
Total Pages | : 456 |
Release | : 2014-06-24 |
Genre | : Computers |
ISBN | : 0857098098 |
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author | : Albert Chin |
Publisher | : |
Total Pages | : |
Release | : 2013 |
Genre | : |
ISBN | : |
Author | : Tseung-Yuen Tseng |
Publisher | : |
Total Pages | : |
Release | : 2012 |
Genre | : Flash memories (Computers) |
ISBN | : 9781588832504 |