Chemical Vapor Deposition and Characterization of Tungsten Boron Alloy Films

Chemical Vapor Deposition and Characterization of Tungsten Boron Alloy Films
Author:
Publisher:
Total Pages: 8
Release: 1993
Genre:
ISBN:

A low pressure chemical vapor deposition (LPCVD) process for depositing W{sub X}B{sub (1-X)} films from WF6 and B2H6 is described. The depositions were performed in a cold wall reactor on 6 in. Si wafers at 400C. During deposition, pressure was maintained at a fixed level in the range of 200 to 260 mTorr. Ratio of WF6/B2H6 was varied from 0.05 to 1.07. Carrier gas was either 100 sccm of Ar with a gas flow of 308 to 591 sccm, or 2000 sccm of Ar and 2000 sccm of H2 with the overall gas flow from 4213 to 4452 sccm. Two stable deposition regions were found separated by an unstable region that produced non-uniform films. The B-rich films produced in one of the stable deposition regions had W concentrations of 30 at.% and resistivities between 200 and 300 [mu]ohm·cm. The W-rich films produced in the other stable deposition region had W concentrations of 80 at.% and resistivities of 100 [mu]ohm·cm. As-deposited films had densities similar to bulk material of similar stoichiometry. Barrier properties of the films against diffusion of Cu to 700C in vacuum were measured by 4-point probe. Also, annealing was carried out to 900C in order to determine phases formed as the films crystallize. These studies indicate that W{sub X}B{sub (1-X)} films may be useful barriers in ULSI metallization applications.

Modeling of Chemical Vapor Deposition of Tungsten Films

Modeling of Chemical Vapor Deposition of Tungsten Films
Author: Chris R. Kleijn
Publisher: Birkhäuser
Total Pages: 138
Release: 2013-11-11
Genre: Science
ISBN: 3034877412

Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.

Microstructural Characterization of LPCVD (Low Pressure Chemical Vapor Deposition) Tungsten Interfaces

Microstructural Characterization of LPCVD (Low Pressure Chemical Vapor Deposition) Tungsten Interfaces
Author: D. C. Paine
Publisher:
Total Pages: 8
Release: 1985
Genre:
ISBN:

Three important interfacial morphologies are observed in LPCVD tungsten on silicon: lateral encroachment, interface roughness, and wormhole structures. They have been shown to be, in part at least, a result of defect condition. Defects which have been positively identified using XTEM include residual native oxide and dislocations from ion implantation. A third phase, possibly tungsten silicide, has been observed but not uniquely identified. Extensive lateral encroachment has been shown to be related to the presence of residual implant damage. Specifically, dislocation loops under oxide grown over arsenic implanted silicon were implicated. Interface roughness appears to result from both residual native oxide patches on the silicon surface as well as to the formation of small protrusions of a third, probably silicide phase. The electron microscopy techniques of microdiffraction and Moire analysis were used in an attempt to identify the third phase. The presence of a third phase has lead to the proposal of a mechanism for the formation of the wormhole structure. Additional work, currently underway, will establish the identity of both the interfacial phase and the wormhole particles.