Characterization And Modeling Of Advanced Charge Trapping Non Volatile Memories
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Author | : Vincenzo Della marca |
Publisher | : |
Total Pages | : 162 |
Release | : 2013 |
Genre | : |
ISBN | : |
The silicon nanocrystal memories are one of the most attractive solutions to replace the Flash floating gate for nonvolatile memory embedded applications, especially for their high compatibility with CMOS process and the lower manufacturing cost. Moreover, the nanocrystal size guarantees a weak device-to-device coupling in an array configuration and, in addition, for this technology it has been shown the robustness against SILC. One of the main challenges for embedded memories in portable and contactless applications is to improve the energy consumption in order to reduce the design constraints. Today the application request is to use the Flash memories with both low voltage biases and fast programming operation. In this study, we present the state of the art of Flash floating gate memory cell and silicon nanocrystal memories. Concerning this latter device, we studied the effect of main technological parameters in order to optimize the cell performance. The aim was to achieve a satisfactory programming window for low energy applications. Furthermore, the silicon nanocrystal cell reliability has been investigated. We present for the first time a silicon nanocrystal memory cell with a good functioning after one million write/erase cycles, working on a wide range of temperature [-40°C; 150°C]. Moreover, ten years data retention at 150°C is extrapolated. Finally, the analysis concerning the current and energy consumption during the programming operation shows the opportunity to use the silicon nanocrystal cell for low power applications. All the experimental data have been compared with the results achieved on Flash floating gate memory, to show the performance improvement.
Author | : Panagiotis Dimitrakis |
Publisher | : Springer |
Total Pages | : 215 |
Release | : 2017-02-14 |
Genre | : Technology & Engineering |
ISBN | : 3319487051 |
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
Author | : Panagiotis Dimitrakis |
Publisher | : Springer |
Total Pages | : 219 |
Release | : 2015-08-05 |
Genre | : Technology & Engineering |
ISBN | : 3319152904 |
This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Author | : Anirban Roy |
Publisher | : |
Total Pages | : 604 |
Release | : 1989 |
Genre | : Random access memory |
ISBN | : |
Author | : Nathan Eichenlaub |
Publisher | : ProQuest |
Total Pages | : 79 |
Release | : 2009 |
Genre | : |
ISBN | : 9781109121902 |
Methods for optimizing the gate stack of charge trapping NVSM devices are also examined in this thesis. The performance of silicon-rich and stoichiometric nitride layers are compared, as well as multi-layer nitrides composed of a mixture of the two types. Stoichiometric silicon nitride (Si3N 4) is shown to improve retention in MANOS devices without sacrificing programming speed.
Author | : Panagiotis Dimitrakis |
Publisher | : |
Total Pages | : |
Release | : 2015 |
Genre | : |
ISBN | : 9783319152912 |
This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Author | : Chun-chen Yeh |
Publisher | : |
Total Pages | : 276 |
Release | : 2009 |
Genre | : |
ISBN | : |
Author | : Elisa Vianello |
Publisher | : |
Total Pages | : |
Release | : 2010 |
Genre | : |
ISBN | : |
Author | : Luca Vito Bruno Perniola |
Publisher | : |
Total Pages | : 127 |
Release | : 2005 |
Genre | : |
ISBN | : |
The PhD thesis, made in collaboration between the Institut National Polytechnique de Grenoble and the University of Pisa, had the final objective to characterise and model the special effects of discrete-trap non-volatile memories as nanocrystal, SONOS or NROM memories. We could develop a common analysis of some electrical features of these different architectures, like the programming window distribution, the "dual-bit" behavior and the data retention under different experimental conditions (initial write or test's temperature). The content of the PhD thesis is made of a part constituted by experimental results of electrical characterization of memories is presented, and another part constituted by the modelling results from analytical and numerical simulations, developed for the investigation of the scaling issues related to these types of memories.
Author | : Jitendra J. Makwana |
Publisher | : |
Total Pages | : 224 |
Release | : 2005 |
Genre | : Computer storage devices |
ISBN | : |