Istfa '98

Istfa '98
Author: ASM International
Publisher: ASM International
Total Pages: 453
Release: 1998-01-01
Genre: Technology & Engineering
ISBN: 161503076X

Advanced Interconnects for ULSI Technology

Advanced Interconnects for ULSI Technology
Author: Mikhail Baklanov
Publisher: John Wiley & Sons
Total Pages: 616
Release: 2012-04-02
Genre: Technology & Engineering
ISBN: 0470662549

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

High Permittivity Gate Dielectric Materials

High Permittivity Gate Dielectric Materials
Author: Samares Kar
Publisher: Springer Science & Business Media
Total Pages: 515
Release: 2013-06-25
Genre: Technology & Engineering
ISBN: 3642365353

"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .