Carbon Nanotubes For Interconnects
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| Author | : Aida Todri-Sanial |
| Publisher | : Springer |
| Total Pages | : 340 |
| Release | : 2016-07-09 |
| Genre | : Technology & Engineering |
| ISBN | : 3319297465 |
This book provides a single-source reference on the use of carbon nanotubes (CNTs) as interconnect material for horizontal, on-chip and 3D interconnects. The authors demonstrate the uses of bundles of CNTs, as innovative conducting material to fabricate interconnect through-silicon vias (TSVs), in order to improve the performance, reliability and integration of 3D integrated circuits (ICs). This book will be first to provide a coherent overview of exploiting carbon nanotubes for 3D interconnects covering aspects from processing, modeling, simulation, characterization and applications. Coverage also includes a thorough presentation of the application of CNTs as horizontal on-chip interconnects which can potentially revolutionize the nanoelectronics industry. This book is a must-read for anyone interested in the state-of-the-art on exploiting carbon nanotubes for interconnects for both 2D and 3D integrated circuits.
| Author | : Debaprasad Das |
| Publisher | : CRC Press |
| Total Pages | : 200 |
| Release | : 2017-12-19 |
| Genre | : Technology & Engineering |
| ISBN | : 1351831089 |
An Alternative to Copper-Based Interconnect Technology With an increase in demand for more circuit components on a single chip, there is a growing need for nanoelectronic devices and their interconnects (a physical connecting medium made of thin metal films between several electrical nodes in a semiconducting chip that transmit signals from one point to another without any distortion). Carbon Nanotube and Graphene Nanoribbon Interconnects explores two new important carbon nanomaterials, carbon nanotube (CNT) and graphene nanoribbon (GNR), and compares them with that of copper-based interconnects. These nanomaterials show almost 1,000 times more current-carrying capacity and significantly higher mean free path than copper. Due to their remarkable properties, CNT and GNR could soon replace traditional copper interconnects. Dedicated to proving their benefits, this book covers the basic theory of CNT and GNR, and provides a comprehensive analysis of the CNT- and GNR-based VLSI interconnects at nanometric dimensions. Explore the Potential Applications of CNT and Graphene for VLSI Circuits The book starts off with a brief introduction of carbon nanomaterials, discusses the latest research, and details the modeling and analysis of CNT and GNR interconnects. It also describes the electrical, thermal, and mechanical properties, and structural behavior of these materials. In addition, it chronicles the progression of these fundamental properties, explores possible engineering applications and growth technologies, and considers applications for CNT and GNR apart from their use in VLSI circuits. Comprising eight chapters this text: Covers the basics of carbon nanotube and graphene nanoribbon Discusses the growth and characterization of carbon nanotube and graphene nanoribbon Presents the modeling of CNT and GNR as future VLSI interconnects Examines the applicability of CNT and GNR in terms of several analysis works Addresses the timing and frequency response of the CNT and GNR interconnects Explores the signal integrity analysis for CNT and GNR interconnects Models and analyzes the applicability of CNT and GNR as power interconnects Considers the future scope of CNT and GNR Beneficial to VLSI designers working in this area, Carbon Nanotube and Graphene Nanoribbon Interconnects provides a complete understanding of carbon-based materials and interconnect technology, and equips the reader with sufficient knowledge about the future scope of research and development for this emerging topic.
| Author | : Afreen Khursheed |
| Publisher | : CRC Press |
| Total Pages | : 239 |
| Release | : 2021-12-23 |
| Genre | : Technology & Engineering |
| ISBN | : 1000504298 |
This textbook comprehensively covers on-chip interconnect dimension and application of carbon nanomaterials for modeling VLSI interconnect and buffer circuits. It provides analysis of ultra-low power high speed nano-interconnects based on different facets such as material modeling, circuit modeling and the adoption of repeater insertion strategies and measurement techniques. It covers important topics including on-chip interconnects, interconnect modeling, electrical impedance modeling of on-chip interconnects, modeling of repeater buffer and variability analysis. Pedagogical features including solved problems and unsolved exercises are interspersed throughout the text for better understanding. Aimed at senior undergraduate and graduate students in the field of electrical engineering, electronics and communications engineering for courses on Advanced VLSI Interconnects/Advanced VLSI Design/VLSI Interconnects/VLSI Design Automation and Techniques, this book: Provides comprehensive coverage of fundamental concepts related to nanotube transistors and interconnects. Discusses properties and performance of practical nanotube devices and related applications. Covers physical and electrical phenomena of carbon nanotubes, as well as applications enabled by this nanotechnology. Discusses the structure, properties, and characteristics of graphene-based on-chip interconnect. Examines interconnect power and interconnect delay issues arising due to downscaling of device size.
| Author | : H.-S. Philip Wong |
| Publisher | : Cambridge University Press |
| Total Pages | : 263 |
| Release | : 2011 |
| Genre | : Science |
| ISBN | : 0521519055 |
The first introductory textbook to explain the properties and performance of practical nanotube devices and related applications.
| Author | : Ali Javey |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 275 |
| Release | : 2009-04-21 |
| Genre | : Technology & Engineering |
| ISBN | : 0387692851 |
This book provides a complete overview of the field of carbon nanotube electronics. It covers materials and physical properties, synthesis and fabrication processes, devices and circuits, modeling, and finally novel applications of nanotube-based electronics. The book introduces fundamental device physics and circuit concepts of 1-D electronics. At the same time it provides specific examples of the state-of-the-art nanotube devices.
| Author | : Ashok Srivastava |
| Publisher | : Pan Stanford |
| Total Pages | : 0 |
| Release | : 2015-03-19 |
| Genre | : Science |
| ISBN | : 9789814613101 |
Discovery of one-dimensional material carbon nanotubes in 1991 by the Japanese physicist Dr. Sumio Iijima has resulted in voluminous research in the field of carbon nanotubes for numerous applications, including possible replacement of silicon used in the fabrication of CMOS chips. One interesting feature of carbon nanotubes is that these can be metallic or semiconducting with a bandgap depending on their diameter. In search of non-classical devices and related technologies, both carbon nanotube-based field-effect transistors and metallic carbon nanotube interconnects are being explored extensively for emerging logic devices and very large-scale integration. Although various models for carbon nanotube-based transistors and interconnects have been proposed in the literature, an integrated approach to make them compatible with the present simulators is yet to be achieved. This book makes an attempt in this direction for the carbon-based electronics through fundamentals of solid-state physics and devices.
| Author | : Zhifeng Ren |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 310 |
| Release | : 2012-09-05 |
| Genre | : Science |
| ISBN | : 3642304907 |
This book gives a survey of the physics and fabrication of carbon nanotubes and their applications in optics, electronics, chemistry and biotechnology. It focuses on the structural characterization of various carbon nanotubes, fabrication of vertically or parallel aligned carbon nanotubes on substrates or in composites, physical properties for their alignment, and applications of aligned carbon nanotubes in field emission, optical antennas, light transmission, solar cells, chemical devices, bio-devices, and many others. Major fabrication methods are illustrated in detail, particularly the most widely used PECVD growth technique on which various device integration schemes are based, followed by applications such as electrical interconnects, nanodiodes, optical antennas, and nanocoax solar cells, whereas current limitations and challenges are also be discussed to lay the foundation for future developments.
| Author | : Mikhail Baklanov |
| Publisher | : John Wiley & Sons |
| Total Pages | : 616 |
| Release | : 2012-02-17 |
| Genre | : Technology & Engineering |
| ISBN | : 1119966868 |
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
| Author | : Raj, Balwinder |
| Publisher | : IGI Global |
| Total Pages | : 255 |
| Release | : 2019-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1799813959 |
With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.
| Author | : Brajesh Kumar Kaushik |
| Publisher | : Springer |
| Total Pages | : 94 |
| Release | : 2014-11-01 |
| Genre | : Technology & Engineering |
| ISBN | : 8132220471 |
The brief primarily focuses on the performance analysis of CNT based interconnects in current research scenario. Different CNT structures are modeled on the basis of transmission line theory. Performance comparison for different CNT structures illustrates that CNTs are more promising than Cu or other materials used in global VLSI interconnects. The brief is organized into five chapters which mainly discuss: (1) an overview of current research scenario and basics of interconnects; (2) unique crystal structures and the basics of physical properties of CNTs, and the production, purification and applications of CNTs; (3) a brief technical review, the geometry and equivalent RLC parameters for different single and bundled CNT structures; (4) a comparative analysis of crosstalk and delay for different single and bundled CNT structures; and (5) various unique mixed CNT bundle structures and their equivalent electrical models.
