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Advanced VLSI Design and Testability Issues
Author | : Suman Lata Tripathi |
Publisher | : CRC Press |
Total Pages | : 379 |
Release | : 2020-08-18 |
Genre | : Technology & Engineering |
ISBN | : 1000168158 |
This book facilitates the VLSI-interested individuals with not only in-depth knowledge, but also the broad aspects of it by explaining its applications in different fields, including image processing and biomedical. The deep understanding of basic concepts gives you the power to develop a new application aspect, which is very well taken care of in this book by using simple language in explaining the concepts. In the VLSI world, the importance of hardware description languages cannot be ignored, as the designing of such dense and complex circuits is not possible without them. Both Verilog and VHDL languages are used here for designing. The current needs of high-performance integrated circuits (ICs) including low power devices and new emerging materials, which can play a very important role in achieving new functionalities, are the most interesting part of the book. The testing of VLSI circuits becomes more crucial than the designing of the circuits in this nanometer technology era. The role of fault simulation algorithms is very well explained, and its implementation using Verilog is the key aspect of this book. This book is well organized into 20 chapters. Chapter 1 emphasizes on uses of FPGA on various image processing and biomedical applications. Then, the descriptions enlighten the basic understanding of digital design from the perspective of HDL in Chapters 2–5. The performance enhancement with alternate material or geometry for silicon-based FET designs is focused in Chapters 6 and 7. Chapters 8 and 9 describe the study of bimolecular interactions with biosensing FETs. Chapters 10–13 deal with advanced FET structures available in various shapes, materials such as nanowire, HFET, and their comparison in terms of device performance metrics calculation. Chapters 14–18 describe different application-specific VLSI design techniques and challenges for analog and digital circuit designs. Chapter 19 explains the VLSI testability issues with the description of simulation and its categorization into logic and fault simulation for test pattern generation using Verilog HDL. Chapter 20 deals with a secured VLSI design with hardware obfuscation by hiding the IC’s structure and function, which makes it much more difficult to reverse engineer.
Nanoscale CMOS
Author | : Francis Balestra |
Publisher | : John Wiley & Sons |
Total Pages | : 518 |
Release | : 2013-03-01 |
Genre | : Technology & Engineering |
ISBN | : 1118622472 |
This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Design Technology for Heterogeneous Embedded Systems
Author | : Gabriela Nicolescu |
Publisher | : Springer Science & Business Media |
Total Pages | : 473 |
Release | : 2012-02-02 |
Genre | : Technology & Engineering |
ISBN | : 9400711255 |
Design technology to address the new and vast problem of heterogeneous embedded systems design while remaining compatible with standard “More Moore” flows, i.e. capable of simultaneously handling both silicon complexity and system complexity, represents one of the most important challenges facing the semiconductor industry today and will be for several years to come. While the micro-electronics industry, over the years and with its spectacular and unique evolution, has built its own specific design methods to focus mainly on the management of complexity through the establishment of abstraction levels, the emergence of device heterogeneity requires new approaches enabling the satisfactory design of physically heterogeneous embedded systems for the widespread deployment of such systems. Heterogeneous Embedded Systems, compiled largely from a set of contributions from participants of past editions of the Winter School on Heterogeneous Embedded Systems Design Technology (FETCH), proposes a necessarily broad and holistic overview of design techniques used to tackle the various facets of heterogeneity in terms of technology and opportunities at the physical level, signal representations and different abstraction levels, architectures and components based on hardware and software, in all the main phases of design (modeling, validation with multiple models of computation, synthesis and optimization). It concentrates on the specific issues at the interfaces, and is divided into two main parts. The first part examines mainly theoretical issues and focuses on the modeling, validation and design techniques themselves. The second part illustrates the use of these methods in various design contexts at the forefront of new technology and architectural developments.
Semiconductor-On-Insulator Materials for Nanoelectronics Applications
Author | : Alexei Nazarov |
Publisher | : Springer Science & Business Media |
Total Pages | : 437 |
Release | : 2011-03-03 |
Genre | : Technology & Engineering |
ISBN | : 3642158684 |
"Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET
Author | : Iraj Sadegh Amiri |
Publisher | : Springer |
Total Pages | : 125 |
Release | : 2018-12-13 |
Genre | : Technology & Engineering |
ISBN | : 3030045137 |
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
Nanowire Transistors
Author | : Jean-Pierre Colinge |
Publisher | : Cambridge University Press |
Total Pages | : 269 |
Release | : 2016-04-21 |
Genre | : Science |
ISBN | : 1107052408 |
A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.
Silicon-on-insulator Technology and Devices 13
Author | : George K. Celler |
Publisher | : The Electrochemical Society |
Total Pages | : 409 |
Release | : 2007 |
Genre | : Semiconductors |
ISBN | : 1566775531 |
This issue of ESC Transactions covers recent significant advances in SOI technologies. It will be of interest to materials and device scientists, as well as to process and applications oriented engineers. Several keynote papers introduce and review the main topics. This is followed by contributed papers covering the latest research and implementation results.
Nanowire Field Effect Transistors: Principles and Applications
Author | : Dae Mann Kim |
Publisher | : Springer Science & Business Media |
Total Pages | : 292 |
Release | : 2013-10-23 |
Genre | : Technology & Engineering |
ISBN | : 1461481244 |
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Emerging Nanoelectronics
Author | : Adrian M. Ionescu |
Publisher | : |
Total Pages | : 632 |
Release | : 2005 |
Genre | : Metal oxide semiconductors, Complementary |
ISBN | : |