Band Structure of Semiconductors

Band Structure of Semiconductors
Author: I. M. Tsidilkovski
Publisher: Elsevier
Total Pages: 417
Release: 2016-10-19
Genre: Science
ISBN: 1483157865

Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillations, magnetophonon resonance, and magneto-optical phenomena are discussed. Experimental physicists, theoretical physicists, students and research workers, and engineers working in the field of semiconductor electronics will find this book a great source of vital information.

Band Structure Engineering in Semiconductor Microstructures

Band Structure Engineering in Semiconductor Microstructures
Author: R.A. Abram
Publisher: Springer Science & Business Media
Total Pages: 383
Release: 2012-12-06
Genre: Science
ISBN: 1475707703

This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.

Basic Semiconductor Physics

Basic Semiconductor Physics
Author: Chihiro Hamaguchi
Publisher: Springer Science & Business Media
Total Pages: 444
Release: 2013-04-17
Genre: Technology & Engineering
ISBN: 3662046563

A detailed description of the basic physics of semiconductors. All the important equations describing the properties of these materials are derived without the help of other textbooks. The reader is assumed to have only a basic command of mathematics and some elementary semiconductor physics. The text covers a wide range of important semiconductor phenomena, from the simple to the advanced.

Electronic Structure of Organic Semiconductors

Electronic Structure of Organic Semiconductors
Author: Luís Alcácer
Publisher: Morgan & Claypool Publishers
Total Pages: 135
Release: 2018-12-07
Genre: Technology & Engineering
ISBN: 1643271687

Written in the perspective of an experimental chemist, this book puts together some fundamentals from chemistry, solid state physics and quantum chemistry, to help with understanding and predicting the electronic and optical properties of organic semiconductors, both polymers and small molecules. The text is intended to assist graduate students and researchers in the field of organic electronics to use theory to design more efficient materials for organic electronic devices such as organic solar cells, light emitting diodes and field effect transistors. After addressing some basic topics in solid state physics, a comprehensive introduction to molecular orbitals and band theory leads to a description of computational methods based on Hartree-Fock and density functional theory (DFT), for predicting geometry conformations, frontier levels and energy band structures. Topological defects and transport and optical properties are then addressed, and one of the most commonly used transparent conducting polymers, PEDOT:PSS, is described in some detail as a case study.

Topics in Growth and Device Processing of III-V Semiconductors

Topics in Growth and Device Processing of III-V Semiconductors
Author: S. J. Pearton
Publisher: World Scientific
Total Pages: 568
Release: 1996
Genre: Technology & Engineering
ISBN: 9789810218843

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Band Theory and Electronic Properties of Solids

Band Theory and Electronic Properties of Solids
Author: John Singleton
Publisher: OUP Oxford
Total Pages: 239
Release: 2001-08-30
Genre: Technology & Engineering
ISBN: 0191057460

This book provides an introduction to band theory and the electronic properties of materials at a level suitable for final-year undergraduates or first-year graduate students. It sets out to provide the vocabulary and quantum-mechanical training necessary to understand the electronic, optical and structural properties of the materials met in science and technology and describes some of the experimental techniques which are used to study band structure today. In order to leave space for recent developments, the Drude model and the introduction of quantum statistics are treated synoptically. However, Bloch's theorem and two tractable limits, a very weak periodic potential and the tight-binding model, are developed rigorously and in three dimensions. Having introduced the ideas of bands, effective masses and holes, semiconductor and metals are treated in some detail, along with the newer ideas of artificial structures such as super-lattices and quantum wells, layered organic substances and oxides. Some recent `hot topics' in research are covered, e.g. the fractional Quantum Hall Effect and nano-devices, which can be understood using the techniques developed in the book. In illustrating examples of e.g. the de Haas-van Alphen effect, the book focuses on recent experimental data, showing that the field is a vibrant and exciting one. References to many recent review articles are provided, so that the student can conduct research into a chosen topic at a deeper level. Several appendices treating topics such as phonons and crystal structure make the book self-contained introduction to the fundamentals of band theory and electronic properties in condensed matter physic today.

University Physics

University Physics
Author: OpenStax
Publisher:
Total Pages: 622
Release: 2016-11-04
Genre: Science
ISBN: 9781680920451

University Physics is a three-volume collection that meets the scope and sequence requirements for two- and three-semester calculus-based physics courses. Volume 1 covers mechanics, sound, oscillations, and waves. Volume 2 covers thermodynamics, electricity and magnetism, and Volume 3 covers optics and modern physics. This textbook emphasizes connections between between theory and application, making physics concepts interesting and accessible to students while maintaining the mathematical rigor inherent in the subject. Frequent, strong examples focus on how to approach a problem, how to work with the equations, and how to check and generalize the result. The text and images in this textbook are grayscale.

Properties of Aluminium Gallium Arsenide

Properties of Aluminium Gallium Arsenide
Author: Sadao Adachi
Publisher: IET
Total Pages: 354
Release: 1993
Genre: Aluminium alloys
ISBN: 9780852965580

The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.