Atomic Structure And Electronic Properties Of C Si A Si
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| Author | : M. Page |
| Publisher | : |
| Total Pages | : 5 |
| Release | : 2005 |
| Genre | : |
| ISBN | : |
The atomic structure and electronic properties of crystalline silicon/hydrogenated amorphous silicon (c-Si/a-Si:H) interfaces in silicon heterojunction (SHJ) solar cells are investigated by high-resolution transmission electron microscopy, atomic-resolution Z-contrast imaging, and electron energy loss spectroscopy. We find that all high-performance SHJ solar cells exhibit atomically abrupt and flat c-Si/a-Si:H interfaces and high disorder of the a-Si:H layers. These atomically abrupt and flat c-Si/a-Si:H interfaces can be realized by direct deposition of a-Si:H on c-Si substrates at a substrate temperature below 150 deg C by hot-wire chemical vapor deposition from pure silane.
| Author | : Gustaaf van Tendeloo |
| Publisher | : John Wiley & Sons |
| Total Pages | : 1484 |
| Release | : 2012-12-21 |
| Genre | : Technology & Engineering |
| ISBN | : 3527641874 |
This completely revised successor to the Handbook of Microscopy supplies in-depth coverage of all imaging technologies from the optical to the electron and scanning techniques. Adopting a twofold approach, the book firstly presents the various technologies as such, before going on to cover the materials class by class, analyzing how the different imaging methods can be successfully applied. It covers the latest developments in techniques, such as in-situ TEM, 3D imaging in TEM and SEM, as well as a broad range of material types, including metals, alloys, ceramics, polymers, semiconductors, minerals, quasicrystals, amorphous solids, among others. The volumes are divided between methods and applications, making this both a reliable reference and handbook for chemists, physicists, biologists, materials scientists and engineers, as well as graduate students and their lecturers.
| Author | : B.E. Deal |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 543 |
| Release | : 2013-11-11 |
| Genre | : Science |
| ISBN | : 1489907742 |
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
| Author | : Min-I. Lee |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2018 |
| Genre | : |
| ISBN | : |
The efficiency of the photovoltaic process depends on the electronic band structure of the active material and the charge carrier dynamics. In this thesis, we have studied how these issues are related to the atomic structure in materials for two different technologies of solar cells, namely silicon heterostructure solar cells, and hybrid organic-inorganic perovskite solar cells. In silicon heterostructure solar cells, we have analyzed the impact of defects on the electronic properties of amorphous silicon heterostructures (a-Si:H/a-SIC:H/c-Si) by core level and valence band spectroscopies. In particular, we have quantified the number of dangling bonds inside a-Si:H layer upon irradiation, we have identified the electronic states associated to them, and we have understood the transitions previously observed by photoluminescence. In perovskite solar cells, we have correlated the atomic structure, the electronic structure and the electronic dynamics for two- and three-dimensional hybrid organic-inorganic perovskites. We have used with this goal a whole panel of complementary techniques: X-ray diffraction, angle-resolved photoemission spectroscopy, inverse photoemission spectroscopy, and time-resolved two-photon photoemission. In the two-dimensional perovskite (C6H5C2H4NH3)2PbI4, the valence and conduction bands have been determined experimentally and compared to spectral function simulations. In the three-dimensional perovskite CH3NH3PbI3, we have again determined the band structure and simulated it. Very broad spectral features have been experimentally observed, which relax the optical transition conditions impacting in the solarcell efficiencies. In both experiments and calculations, we observe that the spectral weight follows a cubic periodicity while the system is structurally in the tetragonal phase. This apparent contradiction is explained by the band broadness, which hides the band folding of the tetragonal distortion. As for the relaxation dynamics, we have observed that the photoexcited carriers thermalize in a subpicosecond time scale through the coupling to organic cation vibrations. At longer timescales (10~100 picoseconds), the electron diffusion controls the dynamics. This dynamics is affected by the annealing-induced defects, which localize the photoexcited electrons for more than 300 picoseconds.
| Author | : Martin Franz |
| Publisher | : |
| Total Pages | : |
| Release | : 2015 |
| Genre | : |
| ISBN | : |
| Author | : John Singleton |
| Publisher | : OUP Oxford |
| Total Pages | : 239 |
| Release | : 2001-08-30 |
| Genre | : Technology & Engineering |
| ISBN | : 0191057460 |
This book provides an introduction to band theory and the electronic properties of materials at a level suitable for final-year undergraduates or first-year graduate students. It sets out to provide the vocabulary and quantum-mechanical training necessary to understand the electronic, optical and structural properties of the materials met in science and technology and describes some of the experimental techniques which are used to study band structure today. In order to leave space for recent developments, the Drude model and the introduction of quantum statistics are treated synoptically. However, Bloch's theorem and two tractable limits, a very weak periodic potential and the tight-binding model, are developed rigorously and in three dimensions. Having introduced the ideas of bands, effective masses and holes, semiconductor and metals are treated in some detail, along with the newer ideas of artificial structures such as super-lattices and quantum wells, layered organic substances and oxides. Some recent `hot topics' in research are covered, e.g. the fractional Quantum Hall Effect and nano-devices, which can be understood using the techniques developed in the book. In illustrating examples of e.g. the de Haas-van Alphen effect, the book focuses on recent experimental data, showing that the field is a vibrant and exciting one. References to many recent review articles are provided, so that the student can conduct research into a chosen topic at a deeper level. Several appendices treating topics such as phonons and crystal structure make the book self-contained introduction to the fundamentals of band theory and electronic properties in condensed matter physic today.
| Author | : John Emsley |
| Publisher | : Oxford University Press, USA |
| Total Pages | : 556 |
| Release | : 2003 |
| Genre | : Science |
| ISBN | : 9780198503408 |
A readable, informative, fascinating entry on each one of the 100-odd chemical elements, arranged alphabetically from actinium to zirconium. Each entry comprises an explanation of where the element's name comes from, followed by Body element (the role it plays in living things), Element ofhistory (how and when it was discovered), Economic element (what it is used for), Environmental element (where it occurs, how much), Chemical element (facts, figures and narrative), and Element of surprise (an amazing, little-known fact about it). A wonderful 'dipping into' source for the familyreference shelf and for students.
| Author | : Therald Moeller |
| Publisher | : Elsevier |
| Total Pages | : 1153 |
| Release | : 2012-12-02 |
| Genre | : Science |
| ISBN | : 0323141757 |
Chemistry with Inorganic Qualitative Analysis is a textbook that describes the application of the principles of equilibrium represented in qualitative analysis and the properties of ions arising from the reactions of the analysis. This book reviews the chemistry of inorganic substances as the science of matter, the units of measure used, atoms, atomic structure, thermochemistry, nuclear chemistry, molecules, and ions in action. This text also describes the chemical bonds, the representative elements, the changes of state, water and the hydrosphere (which also covers water pollution and water purification). Water purification occurs in nature through the usual water cycle and by the action of microorganisms. The air flushes dissolved gases and volatile pollutants; when water seeps through the soil, it filters solids as they settle in the bottom of placid lakes. Microorganisms break down large organic molecules containing mostly carbon, hydrogen, nitrogen, oxygen, sulfur, or phosphorus into harmless molecules and ions. This text notes that natural purification occurs if the level of contaminants is not so excessive. This textbook is suitable for both chemistry teachers and students.
| Author | : |
| Publisher | : Newnes |
| Total Pages | : 3572 |
| Release | : 2011-01-28 |
| Genre | : Science |
| ISBN | : 0080932282 |
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
| Author | : Eoin O'Reilly |
| Publisher | : CRC Press |
| Total Pages | : 266 |
| Release | : 2017-12-21 |
| Genre | : Science |
| ISBN | : 1351989715 |
Quantum Theory of Solids presents a concisely-structured tour of the theory relating to chemical bonding and its application to the three most significant topics in solid state physics: semiconductors, magnetism, and superconductivity--topics that have seen major advances in recent years. This is a unique treatment that develops the concepts of quantum theory for the solid state from the basics through to an advanced level, encompassing additional quantum mechanics techniques, such as the variational method and perturbation theory. Written at the senior undergraduate/masters level, it provides an exceptional grounding in the subject.
