Analytical Models for Total Dose Ionization Effects in MOS Devices

Analytical Models for Total Dose Ionization Effects in MOS Devices
Author:
Publisher:
Total Pages: 55
Release: 2008
Genre:
ISBN:

MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and SOI buried oxides. Under positive bias holes created in the gate oxide will transport to the Si / SiO2 interface creating oxide-trapped charge. As a result of hole transport and trapping, hydrogen is liberated in the oxide which can create interface-trapped charge. The trapped charge will affect the threshold voltage and degrade the channel mobility. Neutralization of oxidetrapped charge by electron tunneling from the silicon and by thermal emission can take place over long periods of time. Neutralization of interface-trapped charge is not observed at room temperature. Analytical models are developed that account for the principal effects of total dose in MOS devices under different gate bias. The intent is to obtain closed-form solutions that can be used in circuit simulation. Expressions are derived for the aging effects of very low dose rate radiation over long time periods.

Ionizing Radiation Effects in MOS Devices and Circuits

Ionizing Radiation Effects in MOS Devices and Circuits
Author: T. P. Ma
Publisher: John Wiley & Sons
Total Pages: 616
Release: 1989-04-18
Genre: Technology & Engineering
ISBN: 9780471848936

The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies
Author:
Publisher:
Total Pages: 15
Release: 2015
Genre:
ISBN:

This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential ([psi]s) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.

Ionizing Radiation Effects in MOS Oxides

Ionizing Radiation Effects in MOS Oxides
Author: Timothy R. Oldham
Publisher: World Scientific
Total Pages: 192
Release: 1999
Genre: Technology & Engineering
ISBN: 9789810233266

This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.

Total Ionizing Dose Effects on MOS and Bipolar Devices in the Natural Space Radiation Environment

Total Ionizing Dose Effects on MOS and Bipolar Devices in the Natural Space Radiation Environment
Author:
Publisher:
Total Pages: 8
Release: 1998
Genre:
ISBN:

Mechanisms that control the response of MOS and bipolar devices to ionizing radiation in the natural space environment are briefly reviewed. Standard tests based on room-temperature irradiation and elevated temperature annealing are described for MOS devices to bound the effects of oxide and interface-trap charge in space. For bipolar devices that exhibit enhanced low-dose-rate sensitivity, a standard test equivalent to that developed for MOS devices is not available. However, screening techniques based on room temperature and/or elevated temperature irradiations are described which can minimize the risk to spacecraft and satellite electronics from this phenomenon.

Advanced Production and Industrial Engineering

Advanced Production and Industrial Engineering
Author: R.M. Singari
Publisher: IOS Press
Total Pages: 720
Release: 2022-11-23
Genre: Technology & Engineering
ISBN: 1643683373

Things change rapidly in the field of engineering, and awareness of innovation in production techniques is essential for those working in the field if they are to utilise the best and most appropriate solutions available. This book presents the proceedings of ICAPIE-22, the 7th International Conference on Advanced Production and Industrial Engineering, held on 11 and 12 June 2022 in Delhi, India. The aim of the conference was to explore new windows for discoveries in design, materials and manufacturing, which have an important role in all fields of scientific growth, and to provide an arena for the showcasing of advancements and research endeavours from around the world. The 102 peer-reviewed and revised papers in this book include a large number of technical papers with rich content, describing ground-breaking research from various institutes. Covering a wide range of topics and promoting the contribution of production and industrial engineering and technology for a sustainable future, the book will be of interest to all those working in production and industrial engineering.

Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices

Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices
Author: Ronald D Schrimpf
Publisher: World Scientific
Total Pages: 349
Release: 2004-07-29
Genre: Technology & Engineering
ISBN: 9814482153

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

Radiation Effects in Semiconductors

Radiation Effects in Semiconductors
Author: Krzysztof Iniewski
Publisher: CRC Press
Total Pages: 432
Release: 2018-09-03
Genre: Technology & Engineering
ISBN: 1439826951

Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.

Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports
Author:
Publisher:
Total Pages: 700
Release: 1995
Genre: Aeronautics
ISBN:

Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.