Advanced Memory Technology
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| Author | : Ye Zhou |
| Publisher | : Royal Society of Chemistry |
| Total Pages | : 752 |
| Release | : 2023-10-09 |
| Genre | : Technology & Engineering |
| ISBN | : 183916994X |
Advanced memory technologies are impacting the information era, representing a vibrant research area of huge interest in the electronics industry. The demand for data storage, computing performance and energy efficiency is increasing exponentially and will exceed the capabilities of current information technologies. Alternatives to traditional silicon technology and novel memory principles are expected to meet the need of modern data-intensive applications such as “big data” and artificial intelligence (AI). Functional materials or methodologies may find a key role in building novel, high speed and low power consumption computing and data storage systems. This book covers functional materials and devices in the data storage areas, alongside electronic devices with new possibilities for future computing, from neuromorphic next generation AI to in-memory computing. Summarizing different memory materials and devices to emphasize the future applications, graduate students and researchers can systematically learn and understand the design, materials characteristics, device operation principles, specialized device applications and mechanisms of the latest reported memory materials and devices.
| Author | : Seiichi Aritome |
| Publisher | : John Wiley & Sons |
| Total Pages | : 432 |
| Release | : 2015-12-29 |
| Genre | : Technology & Engineering |
| ISBN | : 1119132606 |
Offers a comprehensive overview of NAND flash memories, with insights into NAND history, technology, challenges, evolutions, and perspectives Describes new program disturb issues, data retention, power consumption, and possible solutions for the challenges of 3D NAND flash memory Written by an authority in NAND flash memory technology, with over 25 years’ experience
| Author | : Manish Verma |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 192 |
| Release | : 2007-06-20 |
| Genre | : Technology & Engineering |
| ISBN | : 1402058977 |
This book proposes novel memory hierarchies and software optimization techniques for the optimal utilization of memory hierarchies. It presents a wide range of optimizations, progressively increasing in the complexity of analysis and of memory hierarchies. The final chapter covers optimization techniques for applications consisting of multiple processes found in most modern embedded devices.
| Author | : Yoshio Nishi |
| Publisher | : Elsevier |
| Total Pages | : 456 |
| Release | : 2014-06-24 |
| Genre | : Computers |
| ISBN | : 0857098098 |
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
| Author | : Denny D. Tang |
| Publisher | : John Wiley & Sons |
| Total Pages | : 352 |
| Release | : 2021-01-07 |
| Genre | : Science |
| ISBN | : 1119562236 |
STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.
| Author | : William D. Brown |
| Publisher | : Wiley-IEEE Press |
| Total Pages | : 624 |
| Release | : 1998 |
| Genre | : Computers |
| ISBN | : |
This comprehensive reference book provides electronics engineers with the technical data and perspective necessary for the intelligent selection, specification, and application of nonvolatile semiconductor memory devices. A "one-stop shopping" tool for the working engineer, this book presents the fundamental aspects of nonvolatile semiconductor memory technologies, devices, reliability, and applications.
| Author | : Hideto Hidaka |
| Publisher | : Springer |
| Total Pages | : 253 |
| Release | : 2017-09-09 |
| Genre | : Technology & Engineering |
| ISBN | : 3319553062 |
This book provides a comprehensive introduction to embedded flash memory, describing the history, current status, and future projections for technology, circuits, and systems applications. The authors describe current main-stream embedded flash technologies from floating-gate 1Tr, floating-gate with split-gate (1.5Tr), and 1Tr/1.5Tr SONOS flash technologies and their successful creation of various applications. Comparisons of these embedded flash technologies and future projections are also provided. The authors demonstrate a variety of embedded applications for auto-motive, smart-IC cards, and low-power, representing the leading-edge technology developments for eFlash. The discussion also includes insights into future prospects of application-driven non-volatile memory technology in the era of smart advanced automotive system, such as ADAS (Advanced Driver Assistance System) and IoE (Internet of Everything). Trials on technology convergence and future prospects of embedded non-volatile memory in the new memory hierarchy are also described. Introduces the history of embedded flash memory technology for micro-controller products and how embedded flash innovations developed; Includes comprehensive and detailed descriptions of current main-stream embedded flash memory technologies, sub-system designs and applications; Explains why embedded flash memory requirements are different from those of stand-alone flash memory and how to achieve specific goals with technology development and circuit designs; Describes a mature and stable floating-gate 1Tr cell technology imported from stand-alone flash memory products - that then introduces embedded-specific split-gate memory cell technologies based on floating-gate storage structure and charge-trapping SONOS technology and their eFlash sub-system designs; Describes automotive and smart-IC card applications requirements and achievements in advanced eFlash beyond 4 0nm node.
| Author | : Yuan Xie |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 321 |
| Release | : 2013-10-21 |
| Genre | : Technology & Engineering |
| ISBN | : 144199551X |
This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.
| Author | : United States. Congress. Senate. Committee on Armed Services |
| Publisher | : |
| Total Pages | : 988 |
| Release | : 1975 |
| Genre | : Military assistance, American |
| ISBN | : |
| Author | : Scott Lowe |
| Publisher | : John Wiley & Sons |
| Total Pages | : 909 |
| Release | : 2010-10-26 |
| Genre | : Computers |
| ISBN | : 1118008014 |
As part of the highly acclaimed Mastering series from Sybex, this book offers a comprehensive look at VMware vSphere 4, how to implement it, and how to make the most of what it offers. Coverage Includes: Shows administrators how to use VMware to realize significant savings in hardware costs while still providing adequate "servers" for their users Demonstrates how to partition a physical server into several virtual machines, reducing the overall server footprint within the operations center Explains how VMware subsumes a network to centralize and simplify its management, thus alleviating the effects of "virtual server sprawl" Now that virtualization is a key cost-saving strategy, Mastering VMware vSphere 4 is the strategic guide you need to maximize the opportunities.
