Advanced Magnetic Characterization Using Electron Microscopy and Its Application on Spintronic Devices

Advanced Magnetic Characterization Using Electron Microscopy and Its Application on Spintronic Devices
Author: Binbin Wang (Ph. D. in materials science)
Publisher:
Total Pages: 0
Release: 2022
Genre: Electron microscopy
ISBN:

Novel spintronic devices based on magnetic skyrmions, a non-volatile nanoscale topological excitation, are attractive as a new paradigm for high data processing speeds and low operating power, addressing the fundamental scaling restrictions in conventional electronics. Identifying materials capable of hosting small skyrmions and being able to image and manipulate skyrmions in these materials is essential as a path to design and develop such devices. Meanwhile, revealing and understanding the mechanisms underlying emergent spintronic phenomenon in these materials will further facilitate the development of next-generation spintronic devices with application in information storage and processing. The focus of this study is to explore and apply different magnetic characterization techniques in the transmission electron microscope (TEM) to investigate the creation, annihilation and manipulation of magnetic skyrmions in potential spintronic materials and devices. The first phase of this research was committed to the establishment of imaging techniques using Lorentz TEM and STEM. In the second phase, these methods have been employed to explore promising skyrmion hosting materials, including single crystal and novel thin films with broken bulk inversion, oxide interfaces with broken surface/mirror inversion, and centrosymmetric materials with geometric confinement. The study’s last step entails the design and investigation of skyrmion dynamics in prototype devices using in-situ sample holders.

Scanning Transmission Electron Microscopy

Scanning Transmission Electron Microscopy
Author: Alina Bruma
Publisher: CRC Press
Total Pages: 162
Release: 2020-12-22
Genre: Technology & Engineering
ISBN: 0429516169

Scanning Transmission Electron Microscopy: Advanced Characterization Methods for Materials Science Applications The information comprised in this book is focused on discussing the latest approaches in the recording of high-fidelity quantitative annular dark-field (ADF) data. It showcases the application of machine learning in electron microscopy and the latest advancements in image processing and data interpretation for materials notoriously difficult to analyze using scanning transmission electron microscopy (STEM). It also highlights strategies to record and interpret large electron diffraction datasets for the analysis of nanostructures. This book: Discusses existing approaches for experimental design in the recording of high-fidelity quantitative ADF data Presents the most common types of scintillator-photomultiplier ADF detectors, along with their strengths and weaknesses. Proposes strategies to minimize the introduction of errors from these detectors and avenues for dealing with residual errors Discusses the practice of reliable multiframe imaging, along with the benefits and new experimental opportunities it presents in electron dose or dose-rate management Focuses on supervised and unsupervised machine learning for electron microscopy Discusses open data formats, community-driven software, and data repositories Proposes methods to process information at both global and local scales, and discusses avenues to improve the storage, transfer, analysis, and interpretation of multidimensional datasets Provides the spectrum of possibilities to study materials at the resolution limit by means of new developments in instrumentation Recommends methods for quantitative structural characterization of sensitive nanomaterials using electron diffraction techniques and describes strategies to collect electron diffraction patterns for such materials This book helps academics, researchers, and industry professionals in materials science, chemistry, physics, and related fields to understand and apply computer-science–derived analysis methods to solve problems regarding data analysis and interpretation of materials properties.

Transmission Electron Microscopy Techniques for Characterization of Perpendicular Magnetic Recording Media Nanostructures

Transmission Electron Microscopy Techniques for Characterization of Perpendicular Magnetic Recording Media Nanostructures
Author: Faraz Hossein-Babaei
Publisher:
Total Pages:
Release: 2013
Genre:
ISBN:

The hard disk drive technology is well-established now as a multi-billion dollar industry. Ever since the advent of hard disk magnetic recording media for computers in the 1950's, their data storage density has been increasing at an exponential rate in response to the growing need for memory storage space. Data in bits of 0 and 1 is written in the magnetic layer (ML) of perpendicular magnetic recording (PMR) media in blocks of effectively uniform magnetizations in hexagonal closed-packed (HCP) structure Co-rich magnetic grains (separated by a nonmagnetic intergranular phase) in directions perpendicular to the disk surface. While the densely packed grains are randomly positioned across the ML as fabricated, the magnetization blocks are written in precisely addressed locations along tracks using the write pole of the read/write head of the memory device. The magnetic nanocrystals form the medium for the writing of information. Obtaining a desirable nanostructure in the ML is of critical importance to the performance of the device. In order to reduce the physical bit size, the ML grain size has been trimmed down over time to maintain a desired signal-to-noise ratio. This progress has been supported by research focused on characterizing the grain structure in terms of size and size distribution. The ML nanostructure must be studied at the nanoscale to facilitate further reduction of the bit size. The transmission electron microscope (TEM) is the ideal tool for examining the nanoscale features of the PMR media. In this work, the TEM was utilized to develop techniques for the study, at the atomic scale, of key structural features of the PMR media which had not been experimentally examined before. The structural and crystallographic correlations between the grains of the ML and its RU seed layer were identified experimentally by observing the two layer structures simultaneously using the energy dispersive spectrometry technique -- a method of studying the chemical constituents of each layer with a scanning TEM technique. This study revealed the one-to-one grain structure relationship. The crystallographic relationship between the nanocrystals in the two layers was identified by analysing the observed Moiré fringes in TEM images. In addition, clusters of grains with common crystallographic orientations in the ML were identified using a novel 2 1/2 dimensional dark field imaging technique previously used to study crystal orientations in physical polycrystalline material systems. Furthermore, through the use of a spherical-aberration-corrected TEM, key structural features of the ML with potential consequences in the performance of the device were revealed at the atomic scale. This revelation was achieved by eliminating the delocalization effect resulting from the objective lens spherical aberration by which, in conventional TEM images, the lattice fringes are extended beyond the crystal boundaries. The newly observed features include the nanocrystalline bridges connecting neighboring magnetic grains through the amorphous intergranular phase and faceting of the grains along their prominent plane systems. Thus, the TEM is shown to be a powerful tool to study different structure-property relationships in these important materials. The results presented in this work are expected to contribute to the on-going efforts to increase the volume of information accommodated in more compact devices after the fine-scale structures observed using advanced microscopy are correlated with the magnetic properties of the device.

Field Emission Scanning Electron Microscopy

Field Emission Scanning Electron Microscopy
Author: Nicolas Brodusch
Publisher: Springer
Total Pages: 143
Release: 2017-09-25
Genre: Technology & Engineering
ISBN: 9811044333

This book highlights what is now achievable in terms of materials characterization with the new generation of cold-field emission scanning electron microscopes applied to real materials at high spatial resolution. It discusses advanced scanning electron microscopes/scanning- transmission electron microscopes (SEM/STEM), simulation and post-processing techniques at high spatial resolution in the fields of nanomaterials, metallurgy, geology, and more. These microscopes now offer improved performance at very low landing voltage and high -beam probe current stability, combined with a routine transmission mode capability that can compete with the (scanning-) transmission electron microscopes (STEM/-TEM) historically run at higher beam accelerating voltage

Advanced Electron Microscopy of Novel Ferromagnetic Materials and Ferromagnet/oxide Interfaces in Magnetic Tunnel Junctions

Advanced Electron Microscopy of Novel Ferromagnetic Materials and Ferromagnet/oxide Interfaces in Magnetic Tunnel Junctions
Author:
Publisher:
Total Pages: 258
Release: 2013
Genre:
ISBN:

We have studied novel ferromagnetic (FM) materials and FM electrode/tunnel barrier interfaces in magnetic tunnel junctions (MTJs) by advanced electron microscopy including scanning transmission electron microscopy (HRSTEM) and electron energy loss spectroscopy (EELS). MTJs are one of the prototypical spintronic devices, with applications in magnetic random access memory, sensors and read heads. The performance of MTJs depends on several factors, including the FM electrodes and the FM/tunnel barrier interfaces. Therefore, to realize the high performance of MTJs, we first need high quality ferromagnetic electrodes with high spin polarization. High-quality Fe3O4 and Fe4N electrodes with theoretically predicted -100% spin polarization were fabricated by various methods and investigated by HRSTEM and STEM EELS. The Fe3O4 and Fe4N thin films have low defect density and good crystallinity, but when integrated as electrodes in a MTJ, problems emerged. In a Fe4N/AlOx/Fe MTJ, the magnetoresistance was negative, but relatively small, due to a defective Fe3O4 reaction layer formed at the Fe4N/tunnel barrier interface revealed by HRSTEM and EELS. The interfacial reaction layer was thin and discontinuous which made direct imaging difficult. Therefore, STEM EELS was used to map out the reaction layer. A Fe3O4 reaction layer was also found in a nominally symmetric CoFe/AlOx/CoFe MTJs after annealing, which also exhibited inverse TMR and a non-symmetric bias dependence. We also investigated the MTJs with the Heusler alloy Co2MnSi as one or both electrode and crystalline MgO as the tunnel barrier, which exhibit quite high TMR due to coherent tunneling. We showed that the Co2MnSi/MgO interface in these junctions is dominated by a configuration of a pure Mn plane bonded across the interface to O. This was the first observation of that interface termination. HRSTEM images also show that the fraction of MnMn/O interface termination increases with increasing Mn concentration in the CMS electrode. With the help of electron microscopy, we have found methods to increase the TMR of MTJs with half metallic materials as electrodes including Fe3O4 and Co2MnSi. We believe that the potential of half metallic materials will be realized with the development of new materials and new design of FM/tunnel barrier interfaces.

Spin Electronics

Spin Electronics
Author: David D. Awschalom
Publisher: Springer Science & Business Media
Total Pages: 216
Release: 2013-06-29
Genre: Science
ISBN: 9401705321

The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.

Progress in Transmission Electron Microscopy 2

Progress in Transmission Electron Microscopy 2
Author: Xiao-Feng Zhang
Publisher: Springer Science & Business Media
Total Pages: 342
Release: 2001-10-18
Genre: Medical
ISBN: 9783540676812

Transmission electron microscopy (TEM) is now recognized as a crucial tool in materials science. This book, authored by a team of expert Chinese and international authors, covers many aspects of modern electron microscopy, from the architecture of novel electron microscopes, advanced theories and techniques in TEM and sample preparation, to a variety of hands-on examples of TEM applications. Volume 2 illustrates the important role that TEM is playing in the development and characterization of advanced materials, including nanostructures, interfacial structures, defects, and macromolecular complexes.

Handbook of Magnetic Materials

Handbook of Magnetic Materials
Author: Ekkes H. Brück
Publisher: Elsevier
Total Pages: 424
Release: 2018-11-21
Genre: Science
ISBN: 0444641629

Handbook of Magnetic Materials, Volume 27, covers the expansion of magnetism over the last few decades and its applications in research, notably the magnetism of several classes of novel materials that share the presence of magnetic moments with truly ferromagnetic materials. The book is an ideal reference for scientists active in magnetism research, providing readers with novel trends and achievements in magnetism. Each article contains an extensive description given in graphical, as well as, tabular form, with much emphasis placed on the discussion of the experimental material within the framework of physics, chemistry and materials science. Comprises topical review articles written by leading authorities Includes a variety of self-contained introductions to a given area in the field of magnetism without requiring recourse to the published literature Introduces given topics in the field of magnetism Describes novel trends and achievements in magnetism

Electron Microscopy of Semiconducting Materials and ULSI Devices

Electron Microscopy of Semiconducting Materials and ULSI Devices
Author: Clive Hayzelden
Publisher:
Total Pages: 296
Release: 1998
Genre: Technology & Engineering
ISBN:

The first symposium on electron microscopy and materials for ultra-large scale integration (ULSI) at the Society's meeting attracted 34 papers by contributors from Asia, North America, and Europe. They cover specimen preparation and defect analysis in semiconductor devices; metallization, silicides, and diffusion barriers; the advanced characterization of ULSI structures, and semiconductor epitaxy and heterostructures. Annotation copyrighted by Book News, Inc., Portland, OR

Nanomagnetic Materials

Nanomagnetic Materials
Author: Akinobu Yamaguchi
Publisher: Elsevier
Total Pages: 814
Release: 2021-06-28
Genre: Science
ISBN: 0128223545

Nanomagnetic Materials: Fabrication, Characterization and Application explores recent studies of conventional nanomagnetic materials in spintronics, data storage, magnetic sensors and biomedical applications. In addition, the book also reviews novel magnetic characteristics induced in two-dimensional materials, diamonds, and those induced by the artificial formation of lattice defect and heterojunction as novel nanomagnetic materials. Nanomagnetic materials are usually based on d- and f-electron systems. They are an important solution to the demand for higher density of information storage, arising from the emergence of novel technologies required for non-volatile memory systems. Advances in the understanding of magnetization dynamics and in the characteristics of nanoparticles or surface of nanomagnetic materials is resulting in greater expansion of applications of nanomagnetic materials, including in biotechnology, sensor devices, energy harvesting, and power generating systems. This book provides a cogent overview of the latest research on novel nanomagnetic materials, including spintronic nanomagnets, molecular nanomagnets, self-assembling magnetic nanomaterials, nanoparticles, multifunctional materials, and heterojunction-induced novel magnetism. Explains manufacturing principles and process for nanomagnetic materials Discusses physical and chemical properties and potential industrial applications, such as magnetic data storage, sensors, oscillator, permanent magnets, power generations, and biomedical applications Assesses the major challenges of using magnetic nanomaterials on a broad scale