Accge 20 Omvpe 17 The 20th American Conference On Crystal Growth And Epitaxy In Conjunction With The 17th Us Biennial Workshop On Organometallic Vapor Phase Epitaxy August 2 7 2015 Big Sky Mt Usa
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| Author | : Jian-Jang Huang |
| Publisher | : Woodhead Publishing |
| Total Pages | : 673 |
| Release | : 2014-02-14 |
| Genre | : Technology & Engineering |
| ISBN | : 0857099302 |
The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations. Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting. Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. - Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations - Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots - Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting
| Author | : Robert Feigelson |
| Publisher | : Elsevier |
| Total Pages | : 269 |
| Release | : 2004-07-09 |
| Genre | : Science |
| ISBN | : 0080489931 |
There is no question that the field of solid state electronics, which essentially began with work at Bell laboratories just after World War II, has had a profound impact on today's Society. What is not nearly so widely known is that advances in the art and science of crystal growth underpin this technology. Single crystals, once valued only for their beauty, are now found, in one form or another in most electronic, optoelectronic and numerous optical devices. These devices, in turn, have permeated almost every home and village throughout the world. In fact it is hard to imagine what our electronics industry, much less our entire civilization, would have been like if crystal growth scientists and engineers were unable to produce the large, defect free crystals required by device designers. This book brings together two sets of related articles describing advances made in crystal growth science and technology since World War II. One set is from the proceedings of a Symposium held in August 2002 to celebrate 50 years of progress in the field of crystal growth. The second contains articles previously published in the newsletter of the American Association for Crystal Growth in a series called "Milestones in Crystal Growth".The first section of this book contains several articles which describe some of the early history of crystal growth prior to the electronics revolution, and upon which modern crystal growth science and technology is based. This is followed by a special article by Prof. Sunagawa which provides some insight into how the successful Japanese crystal growth industry developed. The next section deals with crystal growth fundamentals including concepts of solute distribution, interface kinetics, constitutional supercooling, morphological stability and the growth of dendrites. The following section describes the growth of crystals from melts and solutions, while the final part involves thin film growth by MBE and OMVPE.These articles were written by some of the most famous theorists and crystal growers working in the field. They will provide future research workers with valuable insight into how these pioneering discoveries were made, and show how their own research and future devices will be based upon these developments.·Articles written by some of the most famous theorists and crystal growers working in the field·Valuable insight into how pioneering discoveries were made.·Show how their own research and future devices will be based upon these developments
| Author | : Anthony C. Jones |
| Publisher | : Royal Society of Chemistry |
| Total Pages | : 600 |
| Release | : 2009 |
| Genre | : Science |
| ISBN | : 0854044655 |
"The book is one of the most comprehensive overviews ever written on the key aspects of chemical vapour deposition processes and it is more comprehensive, technically detailed and up-to-date than other books on CVD. The contributing authors are all practising CVD technologists and are leading international experts in the field of CVD. It presents a logical and progressive overview of the various aspects of CVD processes. Basic concepts, such as the various types of CVD processes, the design of CVD reactors, reaction modelling and CVD precursor chemistry are covered in the first few"--Jacket
| Author | : Krzysztof Iniewski |
| Publisher | : CRC Press |
| Total Pages | : 600 |
| Release | : 2018-09-03 |
| Genre | : Technology & Engineering |
| ISBN | : 143984836X |
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
| Author | : Stuart Irvine |
| Publisher | : John Wiley & Sons |
| Total Pages | : 582 |
| Release | : 2019-10-07 |
| Genre | : Technology & Engineering |
| ISBN | : 1119313015 |
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
| Author | : Materials Research Society. Meeting |
| Publisher | : |
| Total Pages | : 1274 |
| Release | : 1998-04-20 |
| Genre | : Technology & Engineering |
| ISBN | : |
This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.
| Author | : Horst Scholze |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 464 |
| Release | : 2012-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1461390699 |
When it was learned that Professor Scholze was revising his classic work on the nature, structure, and properties of glass, it was natural to conceive the idea of translating the new edition into English. Professor Scholze enthusiastically endorsed this suggestion and asked for the concurrence of his publisher, Springer-Verlag. Springer-Verlag welcomed the idea and readily agreed to provide support. With the essential agreements in place, Professor Michael Lakin, Professor of German at Alfred University, was asked to do the transla tion, and I subsequently agreed to work with Professor Lakin to check for technical accuracy. I was happy to accept this task because of my respect for Professor Scholze and because of the value to glass scientists and engineers of having available an English edition of Glas. Professor Scholze died before publication ofthis English edition of his work. However, he had reviewed the entire English text and had approved it. Professor Lakin and I appreciated the confidence he placed in us, and we were gratified with his acceptance of our efforts. His scientific contributions were numerous and important; they will long serve as guideposts for research in many key areas. We hope this translation of Glas will help make his legacy accessible to more people. Professor Lakin and I have tried to provide a translation that is accurate and true to the original but that has a distinctive English "flavor"; that is, it is not just a literal translation.
| Author | : J. Grabmaier |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 234 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 3642687652 |
In the first contribution to this volume we read that the world-wide production of single crystal silicon amounts to some 2000 metric tons per year. Given the size of present-day silicon-crystals, this number is equivalent to 100000 silicon-crystals grown every year by either the Czochralski (80%) or the floating-zone (20%) technique. But, to the best of my knowledge, no coherent and comprehensive article has been written that deals with "the art and science", as well as the practical and technical aspects of growing silicon crystals by the Czochralski technique. The same could be said about the floating-zone technique were it not for the review article by W. Dietze, W. Keller and A. Miihlbauer which was published in the preceding Volume 5 ("Silicon") of this series (and for a monograph by two of the above authors published about the same time). As editor of this volume I am very glad to have succeeded in persuading two scien tists, W. Zulehner and D. Huber, of Wacker-Chemitronic GmbH - the world's largest producer of silicon-crystals - to write a comprehensive article about the practical and scientific aspects of growing silicon-crystals by the Czochralski method and about silicon wafer manufacture. I am sure that many scientists or engineers who work with silicon crystals -be it in the laboratory or in a production environment - will profit from the first article in this volume.
| Author | : James F. Shackelford |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 209 |
| Release | : 2008-04-12 |
| Genre | : Technology & Engineering |
| ISBN | : 0387733620 |
This is a concise, up-to-date book that covers a wide range of important ceramic materials used in modern technology. Chapters provide essential information on the nature of these key ceramic raw materials including their structure, properties, processing methods and applications in engineering and technology. Treatment is provided on materials such as alumina, aluminates, Andalusite, kyanite, and sillimanite. The chapter authors are leading experts in the field of ceramic materials. An ideal text for graduate students and practising engineers in ceramic engineering, metallurgy, and materials science and engineering.
| Author | : Tatau Nishinaga |
| Publisher | : |
| Total Pages | : 755 |
| Release | : 1994 |
| Genre | : |
| ISBN | : 9780444633033 |
