A Terahertz Emission Spectrometer for the Study of Ultrafast Carrier Dynamics in Semiconductors

A Terahertz Emission Spectrometer for the Study of Ultrafast Carrier Dynamics in Semiconductors
Author: Gregory Bell
Publisher:
Total Pages:
Release: 2017
Genre:
ISBN:

"Ultrafast charge carrier dynamics in semiconductors are behind many operation characteristics of opto-electronic devices. The buildup of carrier momentum in an electric field involves more than the field itself. The buildup also depends on intrinsic interactions within a material that occur on ultrafast time scales. The acceleration of the charges that attain this momentum emit a radiation that reveals details of the carrier motion via Maxwell's equation. The frequency of these electromagnetic waves thus depends on the internal processes controlling the momentum rise. These time scales in semiconductors are often in the picosecond regime, which can lead to generation of terahertz (THz) light. By taking coherent measurements of the electric field in time, one can glean information about the carrier motion on femtosecond (fs) times scales. In this writing, the construction of time-resolved THz emission spectrometers designed to detect this THz radiation from sources biased by a quasi-static electric field while being excited by a pulsed fs laser is discussed. The theory of the THz generation from semiconductors outlined is based on established techniques, and shows how they can be used to obtain information ab out the material's properties. Theperformance of the spectrometer is established with standard electro-optic emitters ZnTe and GaP. Two attempts are made to detect THz radiation from novel systems: semiconductor quantum dots (QDs), and organo metallic halide perovskite thin films. Complications that were encountered are summarized, along with steps to overcome them, with the plan to continue to employ the current spectrometer into inquiries ab out ultrafast carrier dynamics in materials." --

Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas

Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas
Author: Suranjana Sengupta
Publisher: Springer Science & Business Media
Total Pages: 84
Release: 2011-06-07
Genre: Science
ISBN: 1441981985

Terahertz science and technology is attracting great interest due to its application in a wide array of fields made possible by the development of new and improved terahertz radiation sources and detectors. This book focuses on the development and characterization of one such source - namely the semi-large aperture photoconducting (PC) antenna fabricated on Fe-doped bulk Ga0.69In0.31As substrate. The high ultrafast carrier mobility, high resistivity, and subpicosecond carrier lifetime along with low bandgap make Ga0.69In0.31As an excellent candidate for PC antenna based THz emitter that can be photoexcited by compact Yb-based multiwatt laser systems for high power THz emission. The research is aimed at evaluating the impact of physical properties of a semi-large aperture Ga0.69In0.31As PC antenna upon its THz generation efficiency, and is motivated by the ultimate goal of developing a high-power terahertz radiation source for time-domain terahertz spectroscopy and imaging systems.

High-power Terahertz Pulse Generation and Nonlinear Terahertz Carrier Dynamics in Semiconductors

High-power Terahertz Pulse Generation and Nonlinear Terahertz Carrier Dynamics in Semiconductors
Author: Ayesheshim Kebie Ayesheshim
Publisher:
Total Pages: 233
Release: 2015
Genre: Semiconductors
ISBN:

This thesis describes the generation, characterization, and nonlinear application of intense terahertz (THz) pulses. Nonlinear THz spectroscopy has emerged as a powerful tool to study the ultrafast time evolution of high-field charge carrier dynamics in semiconductors and nano-materials. The study of such phenomena in semiconductors and semiconductor structures requires intense THz pulses with high electric-field strengths. We have developed an improved experimental setup for generating high-power, nearsingle cycle THz pulses by tilted-pulse-front optical rectification in LiNbO3 with optimized optical-to-THz conversion efficiency, and proper characterization of the THz pulses in the Ultrafast Nanotools lab at the University of Alberta. We have investigated the effects of optical pump pulse pre-chirping and polarization on THz pulse generation using separate compressors for the optical pulses used for THz generation and detection. By down-chirping the 800 nm optical pump pulses to 385 fs, single-cycle THz pulses with energies up to 3.6 microJ were obtained, corresponding to an energy conversion efficiency of 3x10^{-3}. This high-field THz source is capable of generating electric fields greater than which can induce nonlinear carrier dynamics in semiconductors. We demonstrate novel high-field THz experiments that explore nonlinear processes in doped and photo-excited bulk semiconductors. As a benchmark and consistency check, a nonlinear THz absorption bleaching Z-scan experiment was conducted on an n-doped InGaAs epilayer on a lattice matched InP substrate. This experiment confirmed that the THz pulses generated by our source are adequate for ultrafast nonlinear measurements in the THz frequency range. Even more interesting, we have achieved unprecedented THz field absorption bleaching simply by flipping the face of the sample illuminated by the THz pulse pump. That is, we illuminate the insulating (substrate) side of the sample with the THz pulse in the Z-scan experiment rather than illuminating the usual (conducting) face of the sample. In this study considerable insight has been gained into developing an optical diode. We have also developed a technique to measure transient voltage pulses induced in doped and photoexcited semiconductors due to a shift current generated from the nonlinear THz dynamics of free electrons in the conduction band. This is a fascinating feature with a practical application as an ultrafast and ultra-sensitive THz phtotodetector. A Drude-based dynamic intervalley scattering simulation reveals that the nonlinear THz-induced transient voltage pulses are a result of intervalley scattering driven by high-field THz pulses. It is the first time that THz induced picosecond voltage transients are measured in semiconductors. We find that an intense THz pulse incident on an InGaAs sample excites a transient dipole due to intervalley scattering. Also, THz pulse induced transient voltage signals have been investigated in ZnTe, and doped-Si semiconductors due to a direct flow of free carriers upon THz photon absorption. We have observed nonlinear conductivity responses in Si, ZnTe, photo-excited SI-GaAs, and doped InGaAs, showing the strong THz pulse can heat the electron population and create a momentum distribution leading to saturable absorption in the THz frequency range.

Terahertz Spectroscopy

Terahertz Spectroscopy
Author: Susan L. Dexheimer
Publisher: CRC Press
Total Pages: 358
Release: 2017-12-19
Genre: Technology & Engineering
ISBN: 142000770X

The development of new sources and methods in the terahertz spectral range has generated intense interest in terahertz spectroscopy and its application in an array of fields. Presenting state-of-the-art terahertz spectroscopic techniques, Terahertz Spectroscopy: Principles and Applications focuses on time-domain methods based on femtosecond laser sources and important recent applications in physics, materials science, chemistry, and biomedicine. The first section of the book examines instrumentation and methods for terahertz spectroscopy. It provides a comprehensive treatment of time-domain terahertz spectroscopic measurements, including methods for the generation and detection of terahertz radiation, methods for determining optical constants from time-domain measurements, and the use of femtosecond time-resolved techniques. The last two sections explore a variety of applications of terahertz spectroscopy in physics, materials science, chemistry, and biomedicine. With chapters contributed by leading experts in academia, industry, and research, this volume thoroughly discusses methods and applications, setting it apart from other recent books in this emerging terahertz field.

Ultrafast Dynamical Processes in Semiconductors

Ultrafast Dynamical Processes in Semiconductors
Author: Kong-Thon Tsen
Publisher: Springer Science & Business Media
Total Pages: 424
Release: 2004-02-25
Genre: Technology & Engineering
ISBN: 9783540402398

An international team of experts describes the optical and electronic properties of semiconductors and semiconductor nanostructures at picosecond and femtosecond time scales. The contributions cover the latest research on a wide range of topics. In particular they include novel experimental techniques for studying and characterizing nanostructure materials. The contributions are written in a tutorial way so that not only researchers in the field but also researchers and graduate students outside the field can benefit.

Ultrafast Magnetism I

Ultrafast Magnetism I
Author: Jean-Yves Bigot
Publisher: Springer
Total Pages: 361
Release: 2014-08-05
Genre: Science
ISBN: 3319077430

This volume on Ultrafast Magnetism is a collection of articles presented at the international “Ultrafast Magnetization Conference” held at the Congress Center in Strasbourg, France, from October 28th to November 1st, 2013. This first conference, which is intended to be held every two years, received a wonderful attendance and gathered scientists from 27 countries in the field of Femtomagnetism, encompassing many theoretical and experimental research subjects related to the spins dynamics in bulk or nanostructured materials. The participants appreciated this unique opportunity for discussing new ideas and debating on various physical interpretations of the reported phenomena. The format of a single session with many oral contributions as well as extensive time for poster presentations allowed researchers to have a detailed overview of the field. Importantly, one could sense that, in addition to studying fundamental magnetic phenomena, ultrafast magnetism has entered in a phase where applied physics and engineering are playing an important role. Several devices are being proposed with exciting R&D perspectives in the near future, in particular for magnetic recording, time resolved magnetic imaging and spin polarized transport, therefore establishing connections between various aspects of modern magnetism. Simultaneously, the diversity of techniques and experimental configurations has flourished during the past years, employing in particular Xrays, visible, infra-red and terahertz radiations. It was also obvious that an important effort is being made for tracking the dynamics of spins and magnetic domains at the nanometer scale, opening the pathway to exciting future developments. The concerted efforts between theoretical and experimental approaches for explaining the dynamical behaviors of angular momentum and energy levels, on different classes of magnetic materials, are worth pointing out. Finally it was unanimously recognized that the quality of the scientific oral and poster presentations contributed to bring the conference to a very high international standard.

Intense Terahertz Excitation of Semiconductors

Intense Terahertz Excitation of Semiconductors
Author: Sergey Ganichev
Publisher: OUP Oxford
Total Pages: 432
Release: 2005-12-15
Genre: Technology & Engineering
ISBN: 0191523747

Intense Terahertz Excitation of Semiconductors presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the center of scientific activities because of the need of high-speed electronics. This research monograph brigdes the gap between microwave physics and photonics. It focuses on a core topic of semiconductor physics providing a full description of the state of the art of the field. _ The reader is introduced to new physical phenomena which occur in the terahertz frequency range at the transition from semi-classical physics with a classical field amplitude to the fully quantized limit with photons. The book covers a wide range of optical, optoelectronic, and nonlinear transport processes, presenting experimental results, clearly visualizing models and basic theories. Background information for future work and exhaustive references of current literature are given. A particularly valuable feature is through the discussion of various technical aspects of the terahertz range like the generation of high-power coherent radiation, optical components, instrumentation, and detection schemes of short intense radiation impulses. The book complements, for the first time in form of a monograph, previous books on infrared physics which dealt with low-power optical and opto-electronic processes. It will be useful not only to scientists but also to advanced students who are interested in terahertz research.

Semiconductor TeraHertz Technology

Semiconductor TeraHertz Technology
Author: Guillermo Carpintero
Publisher: John Wiley & Sons
Total Pages: 408
Release: 2015-07-14
Genre: Technology & Engineering
ISBN: 1118920406

Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap". This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Temperature Operation comprehensively and systematically covers semiconductor-based room temperature operating sources such as photomixers, THz antennas, radiation concepts and THz propagation as well as room-temperature operating THz detectors. The second part of the book focuses on applications such as the latest photonic and electronic THz systems as well as emerging THz technologies including: whispering gallery resonators, liquid crystals, metamaterials and graphene-based devices. This book will provide support for practicing researchers and professionals and will be an indispensable reference to graduate students in the field of THz technology. Key features: Includes crucial theoretical background sections to photomixers, photoconductive switches and electronic THz generation & detection. Provides an extensive overview of semiconductor-based THz sources and applications. Discusses vital technologies for affordable THz applications. Supports teaching and studying increasingly popular courses on semiconductor THz technology.

Time-resolved THz Studies of Carrier Dynamics in Semiconductors, Superconductors, and Strongly-correlated Electron Materials

Time-resolved THz Studies of Carrier Dynamics in Semiconductors, Superconductors, and Strongly-correlated Electron Materials
Author:
Publisher:
Total Pages:
Release: 2006
Genre:
ISBN:

Perhaps the most important aspect of contemporary condensed matter physics involves understanding strong Coulomb interactions between the large number of electrons in a solid. Electronic correlations lead to the emergence of new system properties, such as metal-insulator transitions, superconductivity, magneto-resistance, Bose-Einstein condensation, the formation of excitonic gases, or the integer and fractional Quantum Hall effects. The discovery of high-Tc superconductivity in particular was a watershed event, leading to dramatic experimental and theoretical advances in the field of correlated-electron systems. Such materials often exhibit competition between the charge, lattice, spin, and orbital degrees of freedom, whose cause-effect relationships are difficult to ascertain. Experimental insight into the properties of solids is traditionally obtained by time-averaged probes, which measure e.g., linear optical spectra, electrical conduction properties, or the occupied band structure in thermal equilibrium. Many novel physical properties arise from excitations out of the ground state into energetically higher states by thermal, optical, or electrical means. This leads to fundamental interactions between the system's constituents, such as electron-phonon and electron-electron interactions, which occur on ultrafast timescales. While these interactions underlie the physical properties of solids, they are often only indirectly inferred from time-averaged measurements. Time-resolved spectroscopy, consequently, is playing an ever increasing role to provide insight into light-matter interaction, microscopic processes, or cause-effect relationships that determine the physics of complex materials. In the past, experiments using visible and near-infrared femtosecond pulses have been extensively employed, e.g. to follow relaxation and dephasing processes in metals and semiconductors. However, many basic excitations in strongly-correlated electron systems and nanoscale materials occur at lower energies. The terahertz (THz) regime is particularly rich in such fundamental resonances. This includes ubiquitous lattice vibrations and low-energy collective oscillations of conduction charges. In nanoscale materials, band structure quantization also yields novel infrared and THz transitions, including intersubband absorption in quantum wells. The formation of excitons in turn leads to low-energy excitations analogous to inter-level transitions in atoms. In transition-metal oxides, fundamental excitation gaps arise from charge pairing into superconducting condensates and other correlated states. This motivates the use of ultrafast THz spectroscopy as a powerful tool to study light-matter interactions and microscopic processes in nanoscale and correlated-electron materials. A distinct advantage of coherent THz pulses is that the amplitude and phase of the electric field can be measured directly, as the THz fields are coherent with the fs pulses from which they are generated. Using THz time-domain spectroscopy (THz-TDS), both the real and imaginary parts of the response functions (such as the dielectric function) are obtained directly without the need for Kramers?Kronig transforms. The THz response can also be expressed in terms of absorption and refractive index, or as the optical conductivity. The optical conductivity describes the current response of a many-body system to an electric field, an ideal tool to study conducting systems. A second important advantage is the ultrafast time resolution that results from the short temporal duration of the THz time-domain sources. In particular, optical-pump THz-probe spectroscopy enables a delicate probe of the transient THz conductivity after optical photoexcitation. These experiments can provide insight into quasiparticle interactions, phase transitions, or nonequilibrium dynamics. In this chapter we will provide many such examples. Since THz spectroscopy of solids is a quickly expanding field.