2021 International Conference On Simulation Of Semiconductor Processes And Devices Sispad
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Author | : IEEE Staff |
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Total Pages | : |
Release | : 2021-09-27 |
Genre | : |
ISBN | : 9781665406864 |
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading edge research and development results in the area of process and device simulation SISPAD is one of the longest running conferences devoted to technology computer aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures
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Release | : 2021 |
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ISBN | : 9781665406857 |
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Release | : 2020 |
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ISBN | : 9784863487635 |
Author | : IEEE Electron Devices Society |
Publisher | : Institute of Electrical & Electronics Engineers(IEEE) |
Total Pages | : 353 |
Release | : 1997-01-01 |
Genre | : Technology & Engineering |
ISBN | : 9780780337756 |
This conference is aimed at providing an opportunity for presentation and discussion of topics in process, device and circuit modelling for semiconductors. The proceedings contains all papers presented and should serve as a source for scientists and engineers engaged in research and development.
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Release | : 2018 |
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ISBN | : 9781538667903 |
Author | : |
Publisher | : Business Center for Academic |
Total Pages | : 284 |
Release | : 2002 |
Genre | : Technology & Engineering |
ISBN | : 9784891140274 |
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Release | : 2017 |
Genre | : Computer-aided design |
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Total Pages | : |
Release | : 2019 |
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ISBN | : 9781728109404 |
Author | : International Conference on Simulation of Semiconductor Processes and Devices |
Publisher | : |
Total Pages | : 98 |
Release | : 1999 |
Genre | : Electronic books |
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Author | : Tibor Grasser |
Publisher | : Springer Science & Business Media |
Total Pages | : 472 |
Release | : 2007-09-18 |
Genre | : Computers |
ISBN | : 3211728600 |
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites