2016 Ieee International Electron Devices Meeting Iedm
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2016 IEEE International Electron Devices Meeting (IEDM)
| Author | : IEEE Staff |
| Publisher | : |
| Total Pages | : |
| Release | : 2016-12-03 |
| Genre | : |
| ISBN | : 9781509039036 |
the IEEE IEDM has been the world s main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart power technologies, etc
2007 IEEE International Electron Devices Meeting
| Author | : |
| Publisher | : IEEE |
| Total Pages | : 1043 |
| Release | : 2003 |
| Genre | : Technology & Engineering |
| ISBN | : 9781424415076 |
2004 IEEE International Electron Devices Meeting
| Author | : |
| Publisher | : |
| Total Pages | : 1085 |
| Release | : 2004 |
| Genre | : Electronic apparatus and appliances |
| ISBN | : 9780780386846 |
3D Integration of Resistive Switching Memory
| Author | : Qing Luo |
| Publisher | : CRC Press |
| Total Pages | : 107 |
| Release | : 2023-04-13 |
| Genre | : Technology & Engineering |
| ISBN | : 1000888401 |
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
Noise in Nanoscale Semiconductor Devices
| Author | : Tibor Grasser |
| Publisher | : Springer Nature |
| Total Pages | : 724 |
| Release | : 2020-04-26 |
| Genre | : Technology & Engineering |
| ISBN | : 3030375005 |
This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Introduction to Terahertz Electronics
| Author | : Jae-Sung Rieh |
| Publisher | : Springer Nature |
| Total Pages | : 363 |
| Release | : 2020-10-01 |
| Genre | : Technology & Engineering |
| ISBN | : 3030518426 |
This book provides a practical guide to terahertz electronics, especially for readers with an electronics background. The author guides readers through the all the key concepts of terahertz electronics, including terahertz sources, detectors, and waveguides, together with reviews on key terahertz applications on spectroscopy, imaging, communication, and radar. This book will serve as a handy reference for graduate students and engineers in the field of terahertz with a viewpoint from electronics. Presents the topic of terahertz from electronics viewpoint; Designed to be particularly helpful for the readers familiar with semiconductor devices and circuits; Enables optics-based terahertz researchers to understand terahertz electronics; Based on the author’s extensive experience from both industry and academia.
Springer Handbook of Semiconductor Devices
| Author | : Massimo Rudan |
| Publisher | : Springer Nature |
| Total Pages | : 1680 |
| Release | : 2022-11-10 |
| Genre | : Technology & Engineering |
| ISBN | : 3030798275 |
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Emerging 2D Materials and Devices for the Internet of Things
| Author | : Li Tao |
| Publisher | : Elsevier |
| Total Pages | : 348 |
| Release | : 2020-06-12 |
| Genre | : Technology & Engineering |
| ISBN | : 012818387X |
Emerging 2D Materials and Devices for the Internet of Things: Information, Sensing and Energy Applications summarizes state-of-the-art technologies in applying 2D layered materials, discusses energy and sensing device applications as essential infrastructure solutions, and explores designs that will make internet-of-things devices faster, more reliable and more accessible for the creation of mass-market products. The book focuses on information, energy and sensing applications, showing how different types of 2D materials are being used to create a new generation of products and devices that harness the capabilities of wireless technology in an eco-efficient, reliable way. This book is an important resource for both materials scientists and engineers, who are designing new wireless products in a variety of industry sectors. Explores how 2D materials are being used to create faster and more reliable wireless network solutions Discusses how graphene-based nanocomposites are being used for energy harvesting and storage applications Outlines the major challenges for integrating 2D materials in electronic sensing devices
Advances in Non-volatile Memory and Storage Technology
| Author | : Yoshio Nishi |
| Publisher | : Woodhead Publishing |
| Total Pages | : 662 |
| Release | : 2019-06-15 |
| Genre | : Science |
| ISBN | : 0081025858 |
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory
