2007 Ieee International Electron Devices Meeting
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| Author | : Serge Oktyabrsky |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 451 |
| Release | : 2010-03-16 |
| Genre | : Technology & Engineering |
| ISBN | : 1441915478 |
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
| Author | : Daniele Ielmini |
| Publisher | : John Wiley & Sons |
| Total Pages | : 1010 |
| Release | : 2015-12-23 |
| Genre | : Technology & Engineering |
| ISBN | : 3527680934 |
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
| Author | : Wen Siang Lew |
| Publisher | : Springer Nature |
| Total Pages | : 439 |
| Release | : 2021-01-09 |
| Genre | : Science |
| ISBN | : 9811569126 |
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
| Author | : Massimo Rudan |
| Publisher | : Springer Nature |
| Total Pages | : 1680 |
| Release | : 2022-11-10 |
| Genre | : Technology & Engineering |
| ISBN | : 3030798275 |
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
| Author | : Sneh Saurabh |
| Publisher | : CRC Press |
| Total Pages | : 216 |
| Release | : 2016-10-26 |
| Genre | : Science |
| ISBN | : 1315350262 |
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
| Author | : Robert Kozma |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 318 |
| Release | : 2012-06-28 |
| Genre | : Medical |
| ISBN | : 9400744919 |
Physical implementation of the memristor at industrial scale sparked the interest from various disciplines, ranging from physics, nanotechnology, electrical engineering, neuroscience, to intelligent robotics. As any promising new technology, it has raised hopes and questions; it is an extremely challenging task to live up to the high expectations and to devise revolutionary and feasible future applications for memristive devices. The possibility of gathering prominent scientists in the heart of the Silicon Valley given by the 2011 International Joint Conference on Neural Networks held in San Jose, CA, has offered us the unique opportunity of organizing a series of special events on the present status and future perspectives in neuromorphic memristor science. This book presents a selection of the remarkable contributions given by the leaders of the field and it may serve as inspiration and future reference to all researchers that want to explore the extraordinary possibilities given by this revolutionary concept.
| Author | : Jennifer Rupp |
| Publisher | : Springer Nature |
| Total Pages | : 386 |
| Release | : 2021-10-15 |
| Genre | : Technology & Engineering |
| ISBN | : 3030424243 |
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.
| Author | : Chiara Maccato |
| Publisher | : John Wiley & Sons |
| Total Pages | : 516 |
| Release | : 2022-03-07 |
| Genre | : Science |
| ISBN | : 3527347593 |
Tailored Functional Oxide Nanomaterials A comprehensive exploration of the preparation and application of metal oxide nanomaterials Tailored Functional Oxide Nanomaterials: From Design to Multi-Purpose Applications delivers a one-of-a-kind discussion of the fundamentals and key applications of metal oxide nanomaterials. The book explores everything from their preparation to the mastering of their characteristics in an interdisciplinary view. The distinguished authors address theoretical research and advanced technological utilizations, illustrating key issues for the understanding and real-world end-uses of the most important class of inorganic materials. The interplay between the design, preparation, chemico-physical characterization, and functional behaviors of metal oxide nanomaterials in a variety of fields is presented. Up-to-date work and knowledge on these materials is also described, with fulsome summaries of important applications that are relevant to researchers pursuing safety, sustainability, and energy end-uses. Readers will also find: A thorough introduction to vapor phase growth of metal oxide thin films and nanostructures Comprehensive explorations of addressing complex transition metal oxides at the nanoscale, including bottom-up syntheses of nano-objects and properties Practical discussions of nanosized oxides supported on mats of carbon nanotubes, including synthesis strategies and performances of Ti/CNT systems In-depth examinations of computational approaches to the study of oxide nanomaterials and nanoporous oxides Perfect for materials scientists, inorganic chemists, physicists, catalytic chemists, and chemical engineers, Tailored Functional Oxide Nanomaterials will also earn a place in the libraries of solid-state chemists.
| Author | : Jordi Suñé |
| Publisher | : MDPI |
| Total Pages | : 244 |
| Release | : 2020-04-09 |
| Genre | : Technology & Engineering |
| ISBN | : 3039285769 |
Artificial Intelligence (AI) has found many applications in the past decade due to the ever increasing computing power. Artificial Neural Networks are inspired in the brain structure and consist in the interconnection of artificial neurons through artificial synapses. Training these systems requires huge amounts of data and, after the network is trained, it can recognize unforeseen data and provide useful information. The so-called Spiking Neural Networks behave similarly to how the brain functions and are very energy efficient. Up to this moment, both spiking and conventional neural networks have been implemented in software programs running on conventional computing units. However, this approach requires high computing power, a large physical space and is energy inefficient. Thus, there is an increasing interest in developing AI tools directly implemented in hardware. The first hardware demonstrations have been based on CMOS circuits for neurons and specific communication protocols for synapses. However, to further increase training speed and energy efficiency while decreasing system size, the combination of CMOS neurons with memristor synapses is being explored. The memristor is a resistor with memory which behaves similarly to biological synapses. This book explores the state-of-the-art of neuromorphic circuits implementing neural networks with memristors for AI applications.
| Author | : Lado Filipovic |
| Publisher | : MDPI |
| Total Pages | : 202 |
| Release | : 2019-06-24 |
| Genre | : Technology & Engineering |
| ISBN | : 3039210106 |
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
