2004 Ieee International Electron Devices Meeting
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| Author | : A. V. Narlikar |
| Publisher | : OUP Oxford |
| Total Pages | : 936 |
| Release | : 2010-02-11 |
| Genre | : Science |
| ISBN | : 019157967X |
This is an agenda-setting and high-profile book that presents an authoritative and cutting-edge analysis of nanoscience and technology. The Oxford Handbook of Nanoscience and Technology provides a comprehensive and accessible overview of the major achievements in different aspects of this field. The Handbook comprises 3 volumes, structured thematically, with 25 chapters each. Volume I presents fundamental issues of basic physics, chemistry, biochemistry, tribology etc. of nanomaterials. Volume II focuses on the progress made with host of nanomaterials including DNA and protein based nanostructures. Volume III highlights engineering and related developments, with a focus on frontal application areas. All chapters are written by noted international experts in the field. The book should be useful for final year undergraduates specializing in the field. It should prove indispensable to graduate students, and serious researchers from academic and industrial sectors working in the field of Nanoscience and Technology from different disciplines including Physics, Chemistry, Biochemistry, Biotechnology, Medicine, Materials Science, Metallurgy, Ceramics, Information Technology as well as Electrical, Electronic and Computational Engineering.
| Author | : Samar K. Saha |
| Publisher | : CRC Press |
| Total Pages | : 283 |
| Release | : 2020-07-15 |
| Genre | : Technology & Engineering |
| ISBN | : 0429998082 |
To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.
| Author | : Francis Balestra |
| Publisher | : John Wiley & Sons |
| Total Pages | : 518 |
| Release | : 2013-03-01 |
| Genre | : Technology & Engineering |
| ISBN | : 1118622472 |
This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
| Author | : Bruce W. Smith |
| Publisher | : CRC Press |
| Total Pages | : 851 |
| Release | : 2020-05-01 |
| Genre | : Technology & Engineering |
| ISBN | : 1439876762 |
The completely revised Third Edition to the bestselling Microlithography: Science and Technology provides a balanced treatment of theoretical and operational considerations, from fundamental principles to advanced topics of nanoscale lithography. The book is divided into chapters covering all important aspects related to the imaging, materials, and processes that have been necessary to drive semiconductor lithography toward nanometer-scale generations. Renowned experts from the world’s leading academic and industrial organizations have provided in-depth coverage of the technologies involved in optical, deep-ultraviolet (DUV), immersion, multiple patterning, extreme ultraviolet (EUV), maskless, nanoimprint, and directed self-assembly lithography, together with comprehensive descriptions of the advanced materials and processes involved. New in the Third Edition In addition to the full revision of existing chapters, this new Third Edition features coverage of the technologies that have emerged over the past several years, including multiple patterning lithography, design for manufacturing, design process technology co-optimization, maskless lithography, and directed self-assembly. New advances in lithography modeling are covered as well as fully updated information detailing the new technologies, systems, materials, and processes for optical UV, DUV, immersion, and EUV lithography. The Third Edition of Microlithography: Science and Technology authoritatively covers the science and engineering involved in the latest generations of microlithography and looks ahead to the future systems and technologies that will bring the next generations to fruition. Loaded with illustrations, equations, tables, and time-saving references to the most current technology, this book is the most comprehensive and reliable source for anyone, from student to seasoned professional, looking to better understand the complex world of microlithography science and technology.
| Author | : John D. Cressler |
| Publisher | : CRC Press |
| Total Pages | : 1041 |
| Release | : 2017-12-19 |
| Genre | : Technology & Engineering |
| ISBN | : 143987431X |
Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
| Author | : Writam Banerjee |
| Publisher | : CRC Press |
| Total Pages | : 683 |
| Release | : 2024-08-09 |
| Genre | : Technology & Engineering |
| ISBN | : 1040119107 |
In recent years, the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals in various applications have attracted considerable scientific attention in the field of nonvolatile memory (NVM). Nanocrystals are the driving elements that have helped nonvolatile flash memory technology reach its distinguished height, but new approaches are still needed to strengthen nanocrystal-based nonvolatile technology for future applications. This book presents comprehensive knowledge on nanocrystal fabrication methods and applications of nanocrystals in baseline NVM and emerging NVM technologies and the chapters are written by experts in the field from all over the globe. The book presents a detailed analysis on nanocrystal-based emerging devices by a high-level researcher in the field. It has a unique chapter especially dedicated to graphene-based flash memory devices, considering the importance of carbon allotropes in future applications. This updated edition covers emerging ferroelectric memory device, which is a technology for the future, and the chapter is contributed by the well-known Ferroelectric Memory Company, Germany. It includes information related to the applications of emerging memories in sensors and the chapter is contributed by Ajou University, South Korea. The book introduces a new chapter for emerging NVM technology in artificial intelligence and the chapter is contributed by University College London, UK. It guides the readers throughout with appropriate illustrations, excellent figures, and references in each chapter. It is a valuable tool for researchers and developers from the fields of electronics, semiconductors, nanotechnology, materials science, and solid-state memories.
| Author | : D. Misra |
| Publisher | : The Electrochemical Society |
| Total Pages | : 352 |
| Release | : 2006 |
| Genre | : Dielectrics |
| ISBN | : 1566774381 |
This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectics and that have reached below 100nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy source, and various types of sensing devices. As long as one or more of these fuctional devices is in the 1-100nm dimensions, the resultant system can be defined as a nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addtional to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.
| Author | : Santosh K. Kurinec |
| Publisher | : CRC Press |
| Total Pages | : 450 |
| Release | : 2017-07-28 |
| Genre | : Technology & Engineering |
| ISBN | : 1351832085 |
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
| Author | : Gang He |
| Publisher | : John Wiley & Sons |
| Total Pages | : 560 |
| Release | : 2012-08-10 |
| Genre | : Technology & Engineering |
| ISBN | : 3527646361 |
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
| Author | : Yoshio Nishi |
| Publisher | : CRC Press |
| Total Pages | : 1720 |
| Release | : 2017-12-19 |
| Genre | : Technology & Engineering |
| ISBN | : 1420017667 |
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
