2000 Ieee International Symposium On Compound Semiconductors
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Author | : Tho T. Vu |
Publisher | : World Scientific |
Total Pages | : 363 |
Release | : 2003 |
Genre | : Technology & Engineering |
ISBN | : 9812383115 |
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji); Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.
Author | : Y Arakawa |
Publisher | : CRC Press |
Total Pages | : 888 |
Release | : 2002-09-30 |
Genre | : Science |
ISBN | : 1482268981 |
An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical
Author | : P. C. Chang |
Publisher | : The Electrochemical Society |
Total Pages | : 500 |
Release | : 2005 |
Genre | : Technology & Engineering |
ISBN | : 9781566774628 |
Author | : Athanasios Dimoulas |
Publisher | : Springer Science & Business Media |
Total Pages | : 397 |
Release | : 2008-01-01 |
Genre | : Technology & Engineering |
ISBN | : 354071491X |
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Author | : |
Publisher | : |
Total Pages | : 536 |
Release | : 2003 |
Genre | : Compound semiconductors |
ISBN | : |
Author | : P. C. Chang |
Publisher | : The Electrochemical Society |
Total Pages | : 180 |
Release | : 2001 |
Genre | : Technology & Engineering |
ISBN | : 9781566773539 |
Author | : Zhaojun Liu |
Publisher | : Morgan & Claypool Publishers |
Total Pages | : 75 |
Release | : 2016-02-22 |
Genre | : Technology & Engineering |
ISBN | : 1627058532 |
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
Author | : Mathias Schubert |
Publisher | : Springer Science & Business Media |
Total Pages | : 216 |
Release | : 2004-11-26 |
Genre | : Science |
ISBN | : 9783540232490 |
The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry examination. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects. A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and future applications such as organic layer structures and highly correlated electron systems are proposed.
Author | : J.C. Woo |
Publisher | : CRC Press |
Total Pages | : 531 |
Release | : 2005-04-01 |
Genre | : Science |
ISBN | : 1482269228 |
Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for t
Author | : Rose Arny |
Publisher | : |
Total Pages | : 1306 |
Release | : 2003 |
Genre | : American literature |
ISBN | : |