1996 International Conference On Simulation Of Semiconductor Processes And Devices
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Author | : IEEE Electron Devices Society |
Publisher | : IEEE |
Total Pages | : 184 |
Release | : 1996 |
Genre | : Technology & Engineering |
ISBN | : 9780780327450 |
This conference is aimed at providing an opportunity for the presentation and discussion of the recent topics in process, device and circuit modeling for semiconductors. The proceedings contains all papers presented at the conference which are carefully selected by experts in the field. A valuable source and indispensable for all scientists and engineers engaged in research and development in semiconductor devices, the proceedings include a wide range of TCAD algorithms to user interfacesProcess Modeling; Impurity Modeling; Future Device Modeling; Advanced Silicon Device Modeling; Equipment and Topography Modeling; Mesh Generation and Circuit Model
Author | : |
Publisher | : |
Total Pages | : 184 |
Release | : 1996 |
Genre | : |
ISBN | : |
Author | : Dimitris Tsoukalas |
Publisher | : Springer Science & Business Media |
Total Pages | : 463 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 3709162440 |
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Author | : International Conference on Simulation of Semiconductor Processes and Devices |
Publisher | : |
Total Pages | : 353 |
Release | : 1997 |
Genre | : Electronic books |
ISBN | : |
Author | : Kristin De Meyer |
Publisher | : Springer Science & Business Media |
Total Pages | : 423 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 3709168279 |
This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)
Author | : Tibor Grasser |
Publisher | : Springer Science & Business Media |
Total Pages | : 472 |
Release | : 2007-09-18 |
Genre | : Computers |
ISBN | : 3211728600 |
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
Author | : |
Publisher | : |
Total Pages | : 368 |
Release | : 2005 |
Genre | : Semiconductors |
ISBN | : |
Author | : IEEE Electron Devices Society |
Publisher | : Institute of Electrical & Electronics Engineers(IEEE) |
Total Pages | : 353 |
Release | : 1997-01-01 |
Genre | : Technology & Engineering |
ISBN | : 9780780337756 |
This conference is aimed at providing an opportunity for presentation and discussion of topics in process, device and circuit modelling for semiconductors. The proceedings contains all papers presented and should serve as a source for scientists and engineers engaged in research and development.
Author | : Gerhard Wachutka |
Publisher | : Springer Science & Business Media |
Total Pages | : 387 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 3709106249 |
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Author | : International Conference on Simulation of Semiconductor Processes and Devices |
Publisher | : |
Total Pages | : 98 |
Release | : 1999 |
Genre | : Electronic books |
ISBN | : |